{"title":"Pressure-Dependent Shape and Edge Configurations of MoS<sub>2</sub> by Kinetic Monte Carlo Simulation.","authors":"Yoonbeen Kang, Rakwoo Chang, Sang-Yong Ju","doi":"10.1021/acsnano.4c12342","DOIUrl":null,"url":null,"abstract":"<p><p>Understanding the influence of precursor pressures is crucial for optimizing the properties of MoS<sub>2</sub> grown through the chemical vapor deposition (CVD) process. In this study, we use kinetic Monte Carlo (KMC) simulations to investigate how varying the pressures of molybdenum (<i>P</i><sub>Mo</sub>) and sulfur (<i>P</i><sub>S</sub>) impacts the structural properties of MoS<sub>2</sub>, such as grain shape and edge configurations. The simulations differentiate three distinct regimes─growth, steady-state, and etching─each defined by specific <i>P</i><sub>Mo</sub>, <i>P</i><sub>S</sub>, and the most probable atomic sites for filling or etching. We further explore how these regimes influence the atomic configuration of MoS<sub>2</sub>, particularly the formation of different edge structures like sulfur zigzag (ZZ<sub>S</sub>), molybdenum zigzag (ZZ<sub>Mo</sub>), and their respective derivatives. A pressure diagram based on the equations of state and most probable atomic sites was constructed for each regime and validated by comparing predicted ZZ-derived edges to experimental observations. Additionally, the study examines the impact of etching on various line defects, providing insights into the evolution of the MoS<sub>2</sub> edges during the CVD process. These findings underscore the importance of controlling both growth and cessation phases in the CVD process to customize edge configurations, with significant implications for chemical functionalization, catalysis, and the electronic properties of transition metal dichalcogenides.</p>","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":" ","pages":"31495-31505"},"PeriodicalIF":15.8000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsnano.4c12342","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/11/1 0:00:00","PubModel":"Epub","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Understanding the influence of precursor pressures is crucial for optimizing the properties of MoS2 grown through the chemical vapor deposition (CVD) process. In this study, we use kinetic Monte Carlo (KMC) simulations to investigate how varying the pressures of molybdenum (PMo) and sulfur (PS) impacts the structural properties of MoS2, such as grain shape and edge configurations. The simulations differentiate three distinct regimes─growth, steady-state, and etching─each defined by specific PMo, PS, and the most probable atomic sites for filling or etching. We further explore how these regimes influence the atomic configuration of MoS2, particularly the formation of different edge structures like sulfur zigzag (ZZS), molybdenum zigzag (ZZMo), and their respective derivatives. A pressure diagram based on the equations of state and most probable atomic sites was constructed for each regime and validated by comparing predicted ZZ-derived edges to experimental observations. Additionally, the study examines the impact of etching on various line defects, providing insights into the evolution of the MoS2 edges during the CVD process. These findings underscore the importance of controlling both growth and cessation phases in the CVD process to customize edge configurations, with significant implications for chemical functionalization, catalysis, and the electronic properties of transition metal dichalcogenides.
期刊介绍:
ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.