Energy-efficient computing at cryogenic temperatures

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-10-31 DOI:10.1038/s41928-024-01278-x

Cezar Zota, Alberto Ferraris, Eunjung Cha, Mridula Prathapan, Peter Mueller, Effendi Leobandung

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Abstract

Increasing demand for data-intense computing applications—such as artificial intelligence, large language models and high-performance computing—has created a need for computing infrastructure that can handle large workloads with high energy efficiency. Advances in silicon-based complementary metal–oxide–semiconductor technology have led to more efficient field-effect transistors, but these devices are fundamentally limited by thermionic injection. As a result, on–off switching efficiency cannot be improved beyond 60 mV of drive voltage per decade of current. Operation of electronics at cryogenic temperatures, such as 77 K, can overcome this limit and provide performance improvements. Here we explore the development of computing at cryogenic temperatures. We examine the changes in electrical transistor and material properties observed at low temperatures, and highlight the need for further studies on cryogenic noise, reliability, variability and thermal management. We also consider the potential performance improvements at the device and circuit level of such technology. This Perspective examines the performance advantages and challenges of operating complementary metal–oxide–semiconductor (CMOS) devices at cryogenic temperatures.

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低温条件下的高能效计算

对数据密集型计算应用（如人工智能、大型语言模型和高性能计算）的需求日益增长，因此需要能够以高能效处理大型工作负载的计算基础设施。硅基互补金属氧化物半导体技术的进步带来了更高效的场效应晶体管，但这些器件从根本上受到热离子注入的限制。因此，通断开关效率无法提高到每十进制电流 60 mV 驱动电压以上。在 77 K 等低温条件下运行电子器件可以克服这一限制，并提高性能。在此，我们将探讨低温计算的发展。我们研究了在低温条件下观察到的电子晶体管和材料特性的变化，并强调了进一步研究低温噪声、可靠性、可变性和热管理的必要性。我们还考虑了此类技术在器件和电路层面的潜在性能改进。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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