Non-contact and non-destructive in-situ inspection for CdSe quantum dot film based on the principle of field-induced photoluminescence quenching

IF 6.8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2024-09-19 DOI:10.1007/s40843-024-3090-8

Zheng Gong (, ), Wenhao Li (, ), Shuqian Zhang (, ), Junlong Li (, ), Hao Su (, ), Wei Huang (, ), Kun Wang (, ), Jiaye Zhu (, ), Xiongtu Zhou (, ), Yongai Zhang (, ), Tailiang Guo (, ), Chaoxing Wu (, )

{"title":"Non-contact and non-destructive in-situ inspection for CdSe quantum dot film based on the principle of field-induced photoluminescence quenching","authors":"Zheng Gong \n (, ), Wenhao Li \n (, ), Shuqian Zhang \n (, ), Junlong Li \n (, ), Hao Su \n (, ), Wei Huang \n (, ), Kun Wang \n (, ), Jiaye Zhu \n (, ), Xiongtu Zhou \n (, ), Yongai Zhang \n (, ), Tailiang Guo \n (, ), Chaoxing Wu \n (, )","doi":"10.1007/s40843-024-3090-8","DOIUrl":null,"url":null,"abstract":"<div><p>CdSe quantum-dot (QD) film, as the core function layer, plays a key role in various optoelectronic devices. The thickness uniformity of QD films is one of the key factors to determine the overall photoelectric performance. Therefore, it is important to obtain the thickness distribution of large-area QD films. However, it is difficult for traditional methods to quickly get the information related to its thickness distribution without introducing additional damage. In this paper, a non-contact and non-destructive inspection method for <i>in-situ</i> detecting the thickness uniformity of CdSe QD film is proposed. The principle behind this <i>in-situ</i> inspection method is that the photoluminescence quenching phenomenon of the QD film would occur under a high electric field, and the degree of photoluminescence quenching is related to the thickness of the quantum dot films. Photoluminescence images of the same QD film without and with an electric field are recorded by a charge-coupled device camera, respectively. By transforming the brightness distribution of these two images, we can intuitively see the thickness information of the thin film array of QD. The proposed method provides a meaningful inspection for the manufacture of QD based light-emitting display.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":773,"journal":{"name":"Science China Materials","volume":"67 11","pages":"3570 - 3578"},"PeriodicalIF":6.8000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40843-024-3090-8","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

CdSe quantum-dot (QD) film, as the core function layer, plays a key role in various optoelectronic devices. The thickness uniformity of QD films is one of the key factors to determine the overall photoelectric performance. Therefore, it is important to obtain the thickness distribution of large-area QD films. However, it is difficult for traditional methods to quickly get the information related to its thickness distribution without introducing additional damage. In this paper, a non-contact and non-destructive inspection method for in-situ detecting the thickness uniformity of CdSe QD film is proposed. The principle behind this in-situ inspection method is that the photoluminescence quenching phenomenon of the QD film would occur under a high electric field, and the degree of photoluminescence quenching is related to the thickness of the quantum dot films. Photoluminescence images of the same QD film without and with an electric field are recorded by a charge-coupled device camera, respectively. By transforming the brightness distribution of these two images, we can intuitively see the thickness information of the thin film array of QD. The proposed method provides a meaningful inspection for the manufacture of QD based light-emitting display.

查看原文本刊更多论文

基于场致光致发光淬灭原理的硒化镉量子点薄膜非接触和无损原位检测

碲化镉（CdSe）量子点（QD）薄膜作为核心功能层，在各种光电器件中发挥着关键作用。量子点薄膜的厚度均匀性是决定其整体光电性能的关键因素之一。因此，获得大面积 QD 薄膜的厚度分布非常重要。然而，传统方法很难在不引入额外损伤的情况下快速获取其厚度分布的相关信息。本文提出了一种原位检测碲化镉 QD 薄膜厚度均匀性的非接触、无损检测方法。这种原位检测方法的原理是，量子点薄膜在高电场下会发生光致发光淬灭现象，而光致发光淬灭的程度与量子点薄膜的厚度有关。电荷耦合器件照相机分别记录了同一 QD 薄膜在无电场和有电场时的光致发光图像。通过转换这两幅图像的亮度分布，我们可以直观地看到量子点薄膜阵列的厚度信息。所提出的方法为基于 QD 的发光显示器的制造提供了一种有意义的检测方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.