Dimensional downscaling and quantum engineering: A path to high-performance micro-LEDs

IF 3.3 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence Pub Date : 2024-10-22 DOI:10.1016/j.jlumin.2024.120951

Shazma Ali, Muhammad Usman

{"title":"Dimensional downscaling and quantum engineering: A path to high-performance micro-LEDs","authors":"Shazma Ali, Muhammad Usman","doi":"10.1016/j.jlumin.2024.120951","DOIUrl":null,"url":null,"abstract":"<div><div>The investigation of the optoelectronic performance of AlGaN-based ultraviolet-C (UV-C) micro light-emitting diodes (μLEDs) emitting at 273 nm is carried out numerically by reducing the chip area from large LED (300 × 300 μm<sup>2</sup>) to μLED (25 × 25 μm<sup>2</sup>). However, due to the high surface to volume ratio of μLED, surface recombination becomes dominant that is generated due to robust sidewall defects. The enhanced current spreading in μLED further affects the carrier injection in the active region as the electrons and holes are captured by sidewall defects. These effects are more dominant at low current density in μLED while at high current density, the sidewall defects get saturated, and the surface recombination weakens. Various optimization strategies, such as quantum wells (QWs) width, quantum barriers (QBs) width, and QW number are carried out to study the effect on the performance of 25 × 25 μm<sup>2</sup> UV-C μLED. These optimization strategies at low current density (0.1 A/cm<sup>2</sup>) further improved the electrical/optical properties of AlGaN-based UV-C μLEDs.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"277 ","pages":"Article 120951"},"PeriodicalIF":3.3000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231324005155","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}

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Abstract

The investigation of the optoelectronic performance of AlGaN-based ultraviolet-C (UV-C) micro light-emitting diodes (μLEDs) emitting at 273 nm is carried out numerically by reducing the chip area from large LED (300 × 300 μm²) to μLED (25 × 25 μm²). However, due to the high surface to volume ratio of μLED, surface recombination becomes dominant that is generated due to robust sidewall defects. The enhanced current spreading in μLED further affects the carrier injection in the active region as the electrons and holes are captured by sidewall defects. These effects are more dominant at low current density in μLED while at high current density, the sidewall defects get saturated, and the surface recombination weakens. Various optimization strategies, such as quantum wells (QWs) width, quantum barriers (QBs) width, and QW number are carried out to study the effect on the performance of 25 × 25 μm² UV-C μLED. These optimization strategies at low current density (0.1 A/cm²) further improved the electrical/optical properties of AlGaN-based UV-C μLEDs.

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降维与量子工程：通向高性能微型 LED 的道路

通过将芯片面积从大型 LED（300 × 300 μm2）缩小到 μLED（25 × 25 μm2），对发射 273 nm 紫外-C（UV-C）紫外光的 AlGaN 基微型发光二极管（μLED）的光电性能进行了数值研究。然而，由于 μLED 的表面与体积比很高，表面重组成为主要现象，这是由于侧壁缺陷产生的。由于电子和空穴被侧壁缺陷捕获，μLED 中增强的电流扩散进一步影响了有源区的载流子注入。这些效应在 μLED 的低电流密度下更为明显，而在高电流密度下，侧壁缺陷趋于饱和，表面重组减弱。我们采用了量子阱（QWs）宽度、量子势垒（QBs）宽度和 QW 数量等各种优化策略，研究它们对 25 × 25 μm2 UV-C μLED 性能的影响。在低电流密度（0.1 A/cm2）条件下，这些优化策略进一步改善了氮化铝基紫外-C μLED的电气/光学性能。

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来源期刊

Journal of Luminescence 物理-光学

CiteScore

6.70

自引率

13.90%

发文量

850

审稿时长

3.8 months

期刊介绍： The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid. We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.