J. Olea , J. Gonzalo , J. Siegel , A.F. Braña , G. Godoy-Pérez , R. Benítez-Fernández , D. Caudevilla , S. Algaidy , F. Pérez-Zenteno , S. Duarte-Cano , A. del Prado , E. García-Hemme , R. García-Hernansanz , D. Pastor , E. San-Andrés , I. Mártil
{"title":"Optoelectronic properties of GaP:Ti photovoltaic devices","authors":"J. Olea , J. Gonzalo , J. Siegel , A.F. Braña , G. Godoy-Pérez , R. Benítez-Fernández , D. Caudevilla , S. Algaidy , F. Pérez-Zenteno , S. Duarte-Cano , A. del Prado , E. García-Hemme , R. García-Hernansanz , D. Pastor , E. San-Andrés , I. Mártil","doi":"10.1016/j.mtsust.2024.101008","DOIUrl":null,"url":null,"abstract":"<div><div>Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 10<sup>4</sup> cm<sup>−1</sup>) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.</div></div>","PeriodicalId":18322,"journal":{"name":"Materials Today Sustainability","volume":"28 ","pages":"Article 101008"},"PeriodicalIF":7.1000,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Sustainability","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589234724003440","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"GREEN & SUSTAINABLE SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm−1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.
期刊介绍:
Materials Today Sustainability is a multi-disciplinary journal covering all aspects of sustainability through materials science.
With a rapidly increasing population with growing demands, materials science has emerged as a critical discipline toward protecting of the environment and ensuring the long term survival of future generations.