Establishment of Multi-Physics coupling model and analysis on thermal stress and crack risk in directional growth of TiAl alloys under electromagnetic confinement
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引用次数: 0
Abstract
The electromagnetic confinement directional solidification (EMCDS) technique is an optimal method for preparing large-size and non-contamination directional TiAl alloy crystals. Despite its advantages, the high temperature gradient inherent to this process induces thermal stress within the ingot, which increases the risk of cracking. To address this challenge, an innovative Integrated Multi-Physics Coupling Model was established to map and study the thermal stress field during EMCDS in this study. It synchronized the computation of the electromagnetic field, temperature field, solute field, flow field, and stress field during the crystal growth of TiAl alloy, and its high accuracy was proved by the micro-indentation experiment. Our analysis reveals that transverse temperature differences are crucial in inducing thermal stresses, and identifies that hot cracks and cold cracks are prone to occur respectively at the area of radial along the sample (X = ) and on the sample surface, which aligns with experimental observations impressively. This model can more accurately and efficiently optimize the process parameters of the EMCDS process to avoid cracks and promote its industrial application.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.