Pre-planting amorphous carbon films based on Ir composite substrates for diamond nucleation

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-26 DOI:10.1016/j.jcrysgro.2024.127945

Junfeng Li , Bing Zhou , D.G. Piliptsou , Hui Sun , Yanxia Wu , Hongjun Hei , Jie Gao , Shengwang Yu

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引用次数: 0

Abstract

A tunable locally ordered amorphous carbon layer was pre-implanted on the iridium (Ir) composite substrate using a multi-excitation source plasma coating system. The nucleation interface was mainly studied by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The results show that by designing and modulating the content and ordering of sp²/sp³ hybridized carbon bonds in the amorphous carbon on the surface of Ir thin films, an overall ordered diamond nucleation layer was obtained. When the pulse frequency of the carbon source was regulated to 9 Hz, the (100) diamond grains were uniformly aligned without the appearance of twins after 4 h of growth, and the nucleation density was 7.5 × 10⁹ cm⁻², which was subsequently expected to obtain single-crystal diamond by grain boundary annihilation. Based on the Ir-amorphous carbon pre-growth layer, it can accelerate the dissolution-precipitation process of carbon ions into the Ir film to form a supersaturated solid solution during the bias nucleation, and increase the nucleation sites, which is of great significance for improving the nucleation density of large-size single-crystal diamond heterogeneous epitaxy.

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基于 Ir 复合基底的预植非晶碳薄膜，用于金刚石成核

利用多激发源等离子涂层系统在铱（Ir）复合基底上预先植入了可调局部有序非晶碳层。主要通过扫描电子显微镜、拉曼光谱和 X 射线光电子能谱对成核界面进行了研究。结果表明，通过设计和调节 Ir 薄膜表面无定形碳中 sp2/sp3 杂化碳键的含量和有序度，可以获得整体有序的金刚石成核层。当调节碳源的脉冲频率为 9 Hz 时，经过 4 h 的生长，（100）金刚石晶粒均匀排列，没有出现孪晶，成核密度为 7.5 × 109 cm-2，随后有望通过晶界湮灭获得单晶金刚石。基于Ir-非晶碳预生长层，可以在偏核过程中加速碳离子在Ir膜中的溶解-沉淀过程，形成过饱和固溶体，增加成核位点，对提高大尺寸单晶金刚石异质外延的成核密度具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.