Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

Nature Electronics Pub Date : 2024-10-30 DOI:10.1038/s41928-024-01274-1

Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han

{"title":"Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors","authors":"Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han","doi":"10.1038/s41928-024-01274-1","DOIUrl":null,"url":null,"abstract":"Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin–orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm2 V−1 s−1 and quantum mobilities of over 3,000 cm2 V−1 s−1 in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"26 1","pages":""},"PeriodicalIF":33.7000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-024-01274-1","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin–orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm² V⁻¹ s⁻¹ and quantum mobilities of over 3,000 cm² V⁻¹ s⁻¹ in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide.

Abstract Image

查看原文本刊更多论文

高迁移率 n 型二硫化钼晶体管中的分数量子霍尔相

理论上，基于半导体过渡金属二卤化物的晶体管可以在量子基态上提供高载流子迁移率、强自旋轨道耦合和固有的强电子相互作用。这使它们非常适合在低温条件下用于纳米电子学。然而，要在低温条件下与过渡金属二卤化物层建立稳固的欧姆接触非常困难。因此，无法达到费米级接近带边的量子极限，也就无法探测部分填充朗道级机制中的电子相关性。在这里，我们展示了利用窗口接触技术可以在毫开尔文到 300 K 的温度范围内创建 n 型二硫化钼的欧姆接触。在低温条件下，我们观察到导带的场效应迁移率超过 100,000 cm2 V-1 s-1，量子迁移率超过 3,000 cm2 V-1 s-1。我们还报告了双层二硫化钼最低朗道级中填充分数为 4/5 和 2/5 的分数量子霍尔态的证据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.