Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Wen Zhang, Ying Wang, Yingnan Guo, Wenquan Ma, Jihoon Lee, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang
{"title":"Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux","authors":"Wen Zhang, Ying Wang, Yingnan Guo, Wenquan Ma, Jihoon Lee, Yuriy I. Mazur, Morgan E. Ware, Gregory J. Salamo, Baolai Liang","doi":"10.1063/5.0235044","DOIUrl":null,"url":null,"abstract":"This research provides a flexible approach to manipulate formation of InGaAs nanostructures on the GaAs (100) surface by varying arsenic (As4) beam equivalent pressure (BEP). By selecting the As4/(In+Ga) BEP ratio to be 4, 8, 20, 50 and 100, we were able to obtain different quantum structures from quantum well (QW) to quantum dots (QDs), then to spatially ordered quantum dot chains (QD-chains), and finally to quantum wires (QWRs), respectively. This transformation of nanostructures was explained by anisotropic surface diffusion coupled with the strain relieving Stranski–Krastanov growth mode, while the anisotropy was modulated by increasing As4 flux and subsequently enhanced by multilayer-stacking growth with a suitable spacer thickness. Photoluminescence characteristics show correlation to the nanostructure morphology for each sample. In particular, the formation of QD-chains and QWRs results in anisotropic features that offer potential device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0235044","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

This research provides a flexible approach to manipulate formation of InGaAs nanostructures on the GaAs (100) surface by varying arsenic (As4) beam equivalent pressure (BEP). By selecting the As4/(In+Ga) BEP ratio to be 4, 8, 20, 50 and 100, we were able to obtain different quantum structures from quantum well (QW) to quantum dots (QDs), then to spatially ordered quantum dot chains (QD-chains), and finally to quantum wires (QWRs), respectively. This transformation of nanostructures was explained by anisotropic surface diffusion coupled with the strain relieving Stranski–Krastanov growth mode, while the anisotropy was modulated by increasing As4 flux and subsequently enhanced by multilayer-stacking growth with a suitable spacer thickness. Photoluminescence characteristics show correlation to the nanostructure morphology for each sample. In particular, the formation of QD-chains and QWRs results in anisotropic features that offer potential device applications.
通过调整 As4 通量操纵不同 InGaAs/GaAs 纳米结构的形成
这项研究提供了一种灵活的方法,通过改变砷(As4)束等效压力(BEP)来操纵砷化镓(InGaAs)纳米结构在砷化镓(GaAs)(100)表面的形成。通过选择 As4/(In+Ga)BEP 比为 4、8、20、50 和 100,我们分别获得了从量子阱(QW)到量子点(QDs),再到空间有序量子点链(QD-chains),最后到量子线(QWRs)的不同量子结构。纳米结构的这种转变是由各向异性的表面扩散与应变释放的斯特兰斯基-克拉斯坦诺夫生长模式相结合所解释的,而各向异性则通过增加 As4 通量来调节,随后通过具有适当间隔厚度的多层堆叠生长来增强。每个样品的光致发光特性都与纳米结构形态相关。特别是,QD 链和 QWR 的形成导致了各向异性特征,从而提供了潜在的器件应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信