Performance enhancement of solution-processed organic thin-film transistors incorporating an improved Corbino structure

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-10-28 DOI:10.1063/5.0229623

Anuj Rajpoot, Soumya Dutta

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引用次数: 0

Abstract

The solution-processed organic thin-film transistors (OTFTs) with a minimal device footprint and improved performance are desirable for flexible electronics and other circuit applications. It is demonstrated that the enhanced performance can be achieved for solution-processed OTFTs by adopting an improved Corbino structure. The bottom-gate bottom-contact OTFTs of W/L ratio of 500 are fabricated using the standard poly-3-hexylthiophene (P3HT) as a semiconductor with an improved interdigitated pseudo-Corbino (IPC) structure. The exhibited IPC structure is a combination of interdigitated structure in the enclosed-Corbino design to achieve infinite output resistance, suppressed parasitic leakage current, and high ON current by accommodating a high W/L ratio in a minimal device footprint. For the fabricated solution-processed OTFTs, infinite output resistance with an OFF-current of the order of 10−12 A and an ON/OFF ratio of drain current of the order of 107 is achieved. Incorporating an enhanced hexamethyldisilazane treatment of the SiO2 gate dielectric improves the ON/OFF ratio to a record value of 108 and the mobility of the order of 10−2 cm2/Vs for P3HT. Implementation of IPC-TFT structure for intentionally chosen moderate-mobility, solution-processed P3HT semiconductor results in a consistent low OFF-current, high ON/OFF ratio, and infinite output resistance with excellent device-to-device uniformity.

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采用改进型 Corbino 结构的溶液处理有机薄膜晶体管的性能提升

溶液处理有机薄膜晶体管（OTFT）具有最小的器件占用空间和更高的性能，是柔性电子器件和其他电路应用的理想选择。研究表明，采用改进的 Corbino 结构可以提高固溶处理 OTFT 的性能。利用标准聚 3-己基噻吩（P3HT）作为半导体，并采用改进的互插式伪科比诺（IPC）结构，制造出了 W/L 比为 500 的底栅底部接触 OTFT。所展示的 IPC 结构是封闭式氯丁橡胶设计中的互插结构的组合，通过在最小的器件基底面上容纳高 W/L 比来实现无限输出电阻、抑制寄生漏电流和高导通电流。所制造的溶液加工 OTFT 实现了无限输出电阻，关断电流为 10-12 A，漏极电流的导通/关断比为 107。对二氧化硅栅极电介质进行增强型六甲基二硅氮烷处理后，P3HT 的导通/关断比提高到创纪录的 108，迁移率达到 10-2 cm2/Vs 量级。在特意选择的中等迁移率溶液加工 P3HT 半导体中采用 IPC-TFT 结构，可实现稳定的低关断电流、高导通/关断比和无限输出电阻，并且器件与器件之间具有极佳的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.