Control of ferroelectricity in Ta-doped HfO2 and its non-zero-crossing current–voltage hysteresis behavior

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-10-28 DOI:10.1063/5.0226181

Cai-Qin Luo, Hong-Jie Pu, Chao-Yang Kang, Cai-Hong Jia, Wei-Feng Zhang

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引用次数: 0

Abstract

Hafnium oxide (HfO2)-based ferroelectrics are being explored as potential candidates for ferroelectric memory devices due to their highly compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Enhancing the remanent polarization and investigating the underlying mechanism are crucial tasks. In the present study, tantalum (Ta) was introduced as a dopant to induce ferroelectric properties in HfO2, a large portion of orthorhombic phase was recognized in the as-grown Ta:HfO2 without further thermal treatment. The remanent polarization of Ta:HfO2 thin films can be optimized by adjusting the oxygen flow rates during the sputtering process. The influencing factors for enhanced ferroelectric performance include the control of Ta concentration, its valence state, and the presence of singly ionized oxygen vacancies, which are influenced by oxygen addition. Furthermore, the resistive switching behavior showing non-zero crossing current–voltage (I–V) hysteresis is associated with ferroelectricity and the presence of oxygen vacancies. A model has been proposed to explain the ferroelectric resistive switching with non-zero crossing I–V characteristics by considering the role of oxygen vacancies and polarization effects. This model suggests that the oxygen vacancies at the surface layer, along with ferroelectric polarization, play a crucial role in electron transport.

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掺杂 Ta 的 HfO2 中铁电性的控制及其非零交叉电流-电压滞后行为

基于氧化铪（HfO2）的铁电因其与互补金属氧化物半导体（CMOS）技术的高度兼容性，正被视为铁电存储器件的潜在候选材料。增强剩电极化和研究其基本机制是至关重要的任务。在本研究中，钽（Ta）作为掺杂剂被引入到 HfO2 中以诱导铁电特性。通过调整溅射过程中的氧气流速，可以优化 Ta:HfO2 薄膜的剩电极化。铁电性能增强的影响因素包括 Ta 浓度的控制、其价态以及单电离氧空位的存在，这些因素都会受到氧气添加量的影响。此外，呈现非零交叉电流-电压（I-V）滞后的电阻开关行为与铁电性和氧空位的存在有关。考虑到氧空位的作用和极化效应，我们提出了一个模型来解释具有非零交叉 I-V 特性的铁电电阻开关。该模型表明，表层的氧空位以及铁电极化在电子传输中起着至关重要的作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.