Visual detection of thermal microvariation characteristics of transparent layer of quartz crucible

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-18 DOI:10.1016/j.jcrysgro.2024.127936

Qian Zhao , Zheng-Li Miao

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引用次数: 0

Abstract

Aiming at detecting and locating bubbles in transparent layer of quartz crucible during the growth of monocrystalline silicon, an improved YOLOv5s model algorithm is proposed in this paper to achieve efficient and accurate crucible bubble detection. Optimize the anchor box through the K-means algorithm to adapt to the bubble dataset before and after the use of the crucible. Utilize the FasterNet backbone network to extract contextual information, enhancing target detection effectiveness. Additionally, the ECA attention mechanism is added to enhance information exchange and improve the accuracy of small target detection. Experimental results show that the improved algorithm performs significantly in bubble detection. For bubble detection before and after use, mAP increased by 2.1 % and 3.29 %, respectively. As usage time increases, the size, shape, and distribution of bubbles in the transparent layer of the quartz crucible change significantly, directly affecting the crucible’s effectiveness. Regular monitoring and evaluation of crucible bubble changes are crucial for maintaining stability and safety in the production process. Further research could explore how these findings can optimize crucible design and usage, improving performance and longevity.

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目测石英坩埚透明层的热微变特性

针对单晶硅生长过程中石英坩埚透明层中气泡的检测和定位，本文提出了一种改进的 YOLOv5s 模型算法，以实现高效准确的坩埚气泡检测。通过 K-means 算法优化锚箱，以适应坩埚使用前后的气泡数据集。利用 FasterNet 骨干网络提取上下文信息，提高目标检测效果。此外，还增加了 ECA 注意机制，以加强信息交换，提高小目标检测的准确性。实验结果表明，改进后的算法在气泡检测方面表现显著。在使用前和使用后的气泡检测中，mAP 分别增加了 2.1 % 和 3.29 %。随着使用时间的延长，石英坩埚透明层中气泡的大小、形状和分布会发生显著变化，直接影响坩埚的使用效果。定期监测和评估坩埚气泡的变化对于保持生产过程的稳定性和安全性至关重要。进一步的研究可以探索这些发现如何优化坩埚的设计和使用，提高性能和使用寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.