Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-10-16 DOI:10.1016/j.jcrysgro.2024.127941

Hyeon-Cheol Kim, V. Janardhanam, Sameer Pokhrel, Chel-Jong Choi

{"title":"Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode","authors":"Hyeon-Cheol Kim, V. Janardhanam, Sameer Pokhrel, Chel-Jong Choi","doi":"10.1016/j.jcrysgro.2024.127941","DOIUrl":null,"url":null,"abstract":"<div><div>The current–voltage and breakdown characteristics of Au/Ni/β-Ga2O3 Schottky barrier diodes were investigated as a function of β-Ga2O3 epilayer thickness in the range of 6–19 μm. The X-ray rocking curves indicated that the full-width half-maximum is reduced with increasing epilayer thickness, implying an improvement in the crystallinity of β-Ga2O3 epilayer. The barrier heights of the field-plated β-Ga2O3 Schottky barrier diode with epitaxial layer thickness of 6, 12, and 19 μm were obtained as 1.01, 1.03, and 1.04 eV, with the ideality factor values being 1.21, 1.19, and 1.46, respectively. The higher ideality factors could be associated with the existence of inhomogeneity at the metal–semiconductor interface. The series resistance of the Schottky diode obtained increased with increasing epilayer thickness. The Schottky diode fabricated on 19 μm thick epitaxial layer exhibited a higher breakdown voltage of 490 V. The increase in epilayer thickness led to the widening of depletion region, resulting in lower electric field over a larger distance. This could be a main cause of the enhancement of the breakdown voltage characteristics of β-Ga2O3 Schottky barrier diode.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127941"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824003798","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

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Abstract

The current–voltage and breakdown characteristics of Au/Ni/β-Ga₂O₃ Schottky barrier diodes were investigated as a function of β-Ga₂O₃ epilayer thickness in the range of 6–19 μm. The X-ray rocking curves indicated that the full-width half-maximum is reduced with increasing epilayer thickness, implying an improvement in the crystallinity of β-Ga₂O₃ epilayer. The barrier heights of the field-plated β-Ga₂O₃ Schottky barrier diode with epitaxial layer thickness of 6, 12, and 19 μm were obtained as 1.01, 1.03, and 1.04 eV, with the ideality factor values being 1.21, 1.19, and 1.46, respectively. The higher ideality factors could be associated with the existence of inhomogeneity at the metal–semiconductor interface. The series resistance of the Schottky diode obtained increased with increasing epilayer thickness. The Schottky diode fabricated on 19 μm thick epitaxial layer exhibited a higher breakdown voltage of 490 V. The increase in epilayer thickness led to the widening of depletion region, resulting in lower electric field over a larger distance. This could be a main cause of the enhancement of the breakdown voltage characteristics of β-Ga₂O₃ Schottky barrier diode.

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外延层厚度对垂直式 β-Ga2O3 肖特基势垒二极管的电气和击穿特性的影响

研究了金/镍/β-Ga2O3 肖特基势垒二极管的电流-电压和击穿特性与 6-19 μm β-Ga2O3 外延层厚度的函数关系。X 射线摇摆曲线表明，随着外延层厚度的增加，半最大全宽减小，这意味着 β-Ga2O3 外延层的结晶度有所提高。外延层厚度分别为 6、12 和 19 μm 的场镀β-Ga2O3 肖特基势垒二极管的势垒高度分别为 1.01、1.03 和 1.04 eV，表观因子分别为 1.21、1.19 和 1.46。较高的理想因子可能与金属-半导体界面存在不均匀性有关。肖特基二极管的串联电阻随着外延层厚度的增加而增大。在 19 μm 厚的外延层上制造的肖特基二极管击穿电压较高，达到 490 V。这可能是提高 β-Ga2O3 肖特基势垒二极管击穿电压特性的主要原因。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.