Mutant amplitude modulation behavior of MIS-like structure of few-layer graphene/SiO2/p-Si in 500–750 GHz band

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2024-10-19 DOI:10.1016/j.diamond.2024.111684

Cheng Chen , Boyuan Gao , Jiaxuan Xue , Zhihao Li , Jixin Wang , Yang Dai , Zhiyong Zhang , Wu Zhao , Johan Stiens

{"title":"Mutant amplitude modulation behavior of MIS-like structure of few-layer graphene/SiO2/p-Si in 500–750 GHz band","authors":"Cheng Chen , Boyuan Gao , Jiaxuan Xue , Zhihao Li , Jixin Wang , Yang Dai , Zhiyong Zhang , Wu Zhao , Johan Stiens","doi":"10.1016/j.diamond.2024.111684","DOIUrl":null,"url":null,"abstract":"<div><div>Graphene has great application potential in the field of electromagnetic modulation field because of its excellent physical and electronic properties. Studies have demonstrated that the properties of graphene films with different layers are also different due to the difference in energy band structure. Nowadays, the modulation mechanism of monolayer graphene (MLG) and bilayer graphene (BLG) has been gradually discovered, but for graphene with more than three layers, the mechanism of whether it is tunable remains to be explored, especially on the proving from an experimental perspective. In this study, the CVD-prepared highly homogeneous few-layer graphene (FLG) film was combined with SiO<sub>2</sub> nanolayers and P-doped Si substrate to form an MIS-like capacitor structure, a unique electromagnetic behavior of mutant amplitude modulation exhibited by FLG film was found, which was different from that of mono- and bi-layers of graphene. The results show that the structure exhibits obvious modulation behavior in the ultra-wideband frequency of 500–750 GHz and the bias of 0.9 V, up to 3.1 dB. This study makes a new supplement to a gap in the EM modulation system of graphene series material.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"150 ","pages":"Article 111684"},"PeriodicalIF":4.3000,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963524008975","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

Abstract

Graphene has great application potential in the field of electromagnetic modulation field because of its excellent physical and electronic properties. Studies have demonstrated that the properties of graphene films with different layers are also different due to the difference in energy band structure. Nowadays, the modulation mechanism of monolayer graphene (MLG) and bilayer graphene (BLG) has been gradually discovered, but for graphene with more than three layers, the mechanism of whether it is tunable remains to be explored, especially on the proving from an experimental perspective. In this study, the CVD-prepared highly homogeneous few-layer graphene (FLG) film was combined with SiO₂ nanolayers and P-doped Si substrate to form an MIS-like capacitor structure, a unique electromagnetic behavior of mutant amplitude modulation exhibited by FLG film was found, which was different from that of mono- and bi-layers of graphene. The results show that the structure exhibits obvious modulation behavior in the ultra-wideband frequency of 500–750 GHz and the bias of 0.9 V, up to 3.1 dB. This study makes a new supplement to a gap in the EM modulation system of graphene series material.

Abstract Image

查看原文本刊更多论文

少层石墨烯/二氧化硅/对硅的 MIS 类结构在 500-750 GHz 波段的突变振幅调制行为

石墨烯因其优异的物理和电子特性，在电磁调制领域具有巨大的应用潜力。研究表明，由于能带结构的不同，不同层的石墨烯薄膜也具有不同的特性。目前，单层石墨烯（MLG）和双层石墨烯（BLG）的调制机理已逐渐被发现，但对于三层以上的石墨烯，其机理是否可调还有待探索，尤其是从实验角度证明。本研究将 CVD 制备的高度均匀的少层石墨烯（FLG）薄膜与 SiO2 纳米层和掺杂 P 的硅衬底相结合，形成了一种类似 MIS 的电容器结构，发现了 FLG 薄膜所表现出的不同于单层和双层石墨烯的突变调幅的独特电磁行为。结果表明，该结构在 500-750 GHz 的超宽带频率和 0.9 V 的偏压下表现出明显的调制行为，最高可达 3.1 dB。这项研究为石墨烯系列材料电磁调制系统的空白做了新的补充。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.