Correlation of residual stress on piezoresistive properties of boron-doped diamond films

Abstract

To investigate the influence of residual stress on the piezoresistive behavior of boron-doped diamond (BDD) films, BDD films with varying doping concentrations were synthesized using a hot-filament chemical vapor deposition (HFCVD) system on silicon and diamond substrates. The relationship between the surface morphology, structural composition, resistivity, and piezoresistive properties of BDD electrodes was examined, along with an in-depth analysis of the impact of boron doping level on these properties. The microstructure and bonding state of the BDD films were characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy. The piezoresistive properties of the BDD films were evaluated employing a cantilever beam bending method. Our findings demonstrate that the level of boron doping not only affects resistivity but also directly influences residual stress in BDD films, both factors having an impact on their piezoresistive properties. Despite significantly larger grain sizes observed in BDD films grown on diamond substrates compared to those grown on silicon substrates at identical boron doping concentrations, they exhibit consistent variations in residual stress and gauge factor (GF) values. With increasing doping levels, the absolute residual stress decreases initially before increasing again; moreover, at 2000 ppm doping level, it transitions from compressive to tensile stress. The GF value is closely associated with both the magnitude and type of residual stress. By utilizing a doping concentration of 2000 ppm for growth on diamond substrates, we achieved a peak GF value of 257 for BDD films which highlights their promising potential for pressure sensor applications.