{"title":"Surface oxygen chemistry of metal oxide semiconductor for gas-sensing application","authors":"Jiayu Li, Ertai Na, Xudong Liang, Qihua Liang, Meihong Fan, Hui Chen, Guodong Li, Xiaoxin Zou","doi":"10.1039/d4qi02385d","DOIUrl":null,"url":null,"abstract":"With the development of science and technology, the demand for reliable and efficient gas sensors in various applications, ranging from environmental monitoring to industrial safety, is increasing. In particular, MOS based-sensors have been extensively studied due to their stability, fast response, and cost-effectiveness. Given this backdrop, the paper reviews the gas-sensing mechanisms of metal oxide semiconductor (MOS) gas sensors, focusing on the role of oxygen participation. The electron depletion layer/hole accumulation layer theory is discussed, emphasizing the importance of chemisorbed oxygen in gas-sensing reactions. However, recent observations have challenged the conventional oxygen adsorption mechanism, suggesting the involvement of lattice oxygen in certain conditions. This review categorizes the degree of oxygen participation into three levels and analyzes existing theories and methods to enhance sensor performance. The specific scenarios of lattice oxygen participation, current understanding, and characterization methods are presented. The article concludes with future prospects and questions to guide further research in advancing MOS-based gas sensors.","PeriodicalId":6,"journal":{"name":"ACS Applied Nano Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Nano Materials","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d4qi02385d","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
With the development of science and technology, the demand for reliable and efficient gas sensors in various applications, ranging from environmental monitoring to industrial safety, is increasing. In particular, MOS based-sensors have been extensively studied due to their stability, fast response, and cost-effectiveness. Given this backdrop, the paper reviews the gas-sensing mechanisms of metal oxide semiconductor (MOS) gas sensors, focusing on the role of oxygen participation. The electron depletion layer/hole accumulation layer theory is discussed, emphasizing the importance of chemisorbed oxygen in gas-sensing reactions. However, recent observations have challenged the conventional oxygen adsorption mechanism, suggesting the involvement of lattice oxygen in certain conditions. This review categorizes the degree of oxygen participation into three levels and analyzes existing theories and methods to enhance sensor performance. The specific scenarios of lattice oxygen participation, current understanding, and characterization methods are presented. The article concludes with future prospects and questions to guide further research in advancing MOS-based gas sensors.
随着科学技术的发展,从环境监测到工业安全等各种应用领域对可靠高效的气体传感器的需求与日俱增。其中,基于 MOS 的传感器因其稳定性、快速响应和成本效益而被广泛研究。在此背景下,本文回顾了金属氧化物半导体(MOS)气体传感器的气体传感机制,重点讨论了氧参与的作用。文中讨论了电子耗尽层/空穴积聚层理论,强调了化学吸附氧在气体传感反应中的重要性。然而,最近的观察结果对传统的氧吸附机制提出了挑战,表明在某些条件下晶格氧也参与其中。本综述将氧的参与程度分为三个等级,并分析了提高传感器性能的现有理论和方法。文章介绍了晶格氧参与的具体情况、目前的理解和表征方法。文章最后提出了未来的展望和问题,以指导进一步研究基于 MOS 的气体传感器。
期刊介绍:
ACS Applied Nano Materials is an interdisciplinary journal publishing original research covering all aspects of engineering, chemistry, physics and biology relevant to applications of nanomaterials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials, engineering, physics, bioscience, and chemistry into important applications of nanomaterials.