Synthesis and characterization of Eu2+ doped Ba2Al2SiO7 green phosphors with excellent luminescence properties

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-24 DOI:10.1007/s10854-024-13709-8

Shiting Zhang, Yuqi Chen, Hongen Wang, Wenpu Li, Rui Ding, Hai Lin, Chun Li

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引用次数: 0

Abstract

Eu²⁺ doped green luminescent phosphors were synthesized by high temperature solid phase method using Ba₂Al₂SiO₇ (BASO)as raw material. Through the study of phase structure, SEM image, fluorescence properties, concentration quenching mechanism, fluorescence decay curve and CIE chrominance coordinates, the results show that a series of green phosphors with good luminescence and consistent matter have been successfully obtained. Under excitation at 351 nm, the phosphors exhibited asymmetric broad green luminescence with the highest peak at 503 nm attributed to the 5d–4f transitions of Eu²⁺. The optimized sample of Ba₂Al₂SiO₇:Eu²⁺ exhibited a lifetime of 693 ns, and the calculated CIE coordinates were (0.136, 0.4844), indicating green luminescence. The above-mentioned properties suggest the potential application prospects of green-emitting Ba₂Al₂SiO₇:Eu²⁺ phosphors in white light-emitting diodes (WLEDs).

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具有优异发光特性的 Eu2+ 掺杂 Ba2Al2SiO7 绿色荧光粉的合成与表征

以Ba2Al2SiO7（BASO）为原料，采用高温固相法合成了掺杂Eu2+的绿色发光荧光粉。通过对相结构、扫描电镜图像、荧光性质、浓度淬灭机理、荧光衰减曲线和 CIE 色度坐标的研究，结果表明成功获得了一系列发光性能良好、物质相一致的绿色荧光粉。在 351 nm 波长的激发下，荧光粉显示出不对称的宽泛绿色荧光，在 503 nm 波长处的最高峰归因于 Eu2+ 的 5d-4f 转变。Ba2Al2SiO7:Eu2+ 的优化样品显示出 693 ns 的寿命，计算得到的 CIE 坐标为（0.136, 0.4844），显示出绿色发光。上述特性表明，绿色发光的 Ba2Al2SiO7:Eu2+ 荧光粉在白光发光二极管（WLED）中具有潜在的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.