Enhancing energy storage properties of Bi4Ti3O12-based dielectric ceramics via doping BaSnO3

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-28 DOI:10.1007/s10854-024-13684-0

Yunkai Zhao, Kai Wang, Lingru Meng, Yunong Liao, Weiqi Zhang, Zhijun Xu, Jinyi Wu, Ruiqing Chu

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引用次数: 0

Abstract

In this work, (1 − x) Bi_2.8La_1.2Ti₃O₁₂₋xBaSnO₃ (x = 0.04–0.07, denoted as (1 − x)BLT–xBSN) ceramics were prepared using traditional solid-phase sintering technology at 1150 °C for 2 h. The introduction of BSN into BLT ceramics not only refines the grain, but also increases the Curie temperature (T_c), in addition to enhancing the dielectric temperature stability. In 0.95BLT–0.05BSN lead-free ceramics, the breakdown field strength reaches 210 kV/cm, and a recoverable energy storage density (W_rec) of 0.73 J/cm³ and an energy storage efficiency (η) of 86.7% are obtained. Furthermore, the 0.95 BLT–0.05 BSN ceramics showed good fatigue properties, with a 3.8% W_rec change over 10⁶ cycles at 20 °C, and, in particular, only a 3.6% W_rec change over 10⁶ cycles at 50 °C, demonstrating insensitivity to temperature changes. In addition, the reduction in ferroelectric polarization is attributed to the significant orbital hybridization between Bi/Ti and O atoms, along with the disorder in A/B site ionic displacements, as inferred from first-principles calculations.

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通过掺杂 BaSnO3 增强 Bi4Ti3O12 基介电陶瓷的储能特性

在这项工作中，采用传统的固相烧结技术在 1150 ℃ 下烧结 2 小时制备了 (1 - x) Bi2.8La1.2Ti3O12-xBaSnO3 (x = 0.04-0.07，表示为 (1 - x)BLT-xBSN) 陶瓷。在 BLT 陶瓷中引入 BSN 不仅细化了晶粒，还提高了居里温度 (Tc)，此外还增强了介电温度稳定性。在 0.95BLT-0.05BSN 无铅陶瓷中，击穿场强达到 210 kV/cm，可恢复储能密度（Wrec）为 0.73 J/cm3，储能效率（η）为 86.7%。此外，0.95 BLT-0.05 BSN 陶瓷显示出良好的疲劳特性，在 20 °C 条件下，106 次循环的 Wrec 变化率为 3.8%，特别是在 50 °C 条件下，106 次循环的 Wrec 变化率仅为 3.6%，这表明陶瓷对温度变化不敏感。此外，根据第一原理计算推断，铁电极化的降低归因于 Bi/Ti 原子和 O 原子间显著的轨道杂化，以及 A/B 位点离子位移的紊乱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.