{"title":"Sm-doped SnO2 nanostructures for aqueous ammonia sensing application","authors":"Nishu Rani, Vijay Kumar, Sunil Kumar, Sandeep Yadav, Sridhar Babu","doi":"10.1007/s10854-024-13721-y","DOIUrl":null,"url":null,"abstract":"<div><p>This paper reports the synthesis of Sm-doped tin oxide nanostructures using a co-precipitation route to develop an aqueous ammonia sensor. The characterization of as-prepared samples was carried out by XRD, FESEM, FTIR, UV–Visible absorption spectroscopy, and energy-resolved photoluminescence, respectively. The crystallite size range is from 8 ± 0.4 nm to 17 ± 1 nm. All samples show nearly spherical morphology with a grain size range of 35–70 nm. FTIR spectra correspond to O–H, C=O, Sn-OH, and Sn–O–Sn functional groups, confirming the formation of SnO<sub>2</sub> nanostructures. The energy band gap varies from 2.71 eV to 3.09 eV. An increase in bandgap observed for 9at% Sm-doped SnO<sub>2</sub> nanostructures may be due to the Moss-Burstein effect. Photoluminescence studies show the increase in band-to-band and defect-related emission with the addition of a dopant and an increase in dopant concentration. Linear sweep Voltammetry of undoped and Sm-doped tin oxide nanostructures was done to develop an aqueous ammonia sensor. I-V characteristics show a rise in current for undoped and Sm-doped SnO<sub>2</sub> nanostructured layers when immersed in water containing ammonia. The analyte detection capability of the samples also increases with an increase in Sm-dopant (3% to 9%) as well as with analyte (NH<sub>3</sub>) concentration (100 ppm to 500 ppm) in water.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13721-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports the synthesis of Sm-doped tin oxide nanostructures using a co-precipitation route to develop an aqueous ammonia sensor. The characterization of as-prepared samples was carried out by XRD, FESEM, FTIR, UV–Visible absorption spectroscopy, and energy-resolved photoluminescence, respectively. The crystallite size range is from 8 ± 0.4 nm to 17 ± 1 nm. All samples show nearly spherical morphology with a grain size range of 35–70 nm. FTIR spectra correspond to O–H, C=O, Sn-OH, and Sn–O–Sn functional groups, confirming the formation of SnO2 nanostructures. The energy band gap varies from 2.71 eV to 3.09 eV. An increase in bandgap observed for 9at% Sm-doped SnO2 nanostructures may be due to the Moss-Burstein effect. Photoluminescence studies show the increase in band-to-band and defect-related emission with the addition of a dopant and an increase in dopant concentration. Linear sweep Voltammetry of undoped and Sm-doped tin oxide nanostructures was done to develop an aqueous ammonia sensor. I-V characteristics show a rise in current for undoped and Sm-doped SnO2 nanostructured layers when immersed in water containing ammonia. The analyte detection capability of the samples also increases with an increase in Sm-dopant (3% to 9%) as well as with analyte (NH3) concentration (100 ppm to 500 ppm) in water.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.