Enhancing optical properties in sulphamic acid single crystals through caesium doping for advanced NLO applications

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2024-10-26 DOI:10.1007/s11082-024-07748-y

G. Sudhakar, D. Rajan Babu

引用次数: 0

Abstract

Sulphamic acid yielded bulk single crystals (pure and Cs doped SA) through a conventional growth process at 30°C. Doping with Cs: SA significantly impacted the material’s structure, as evidenced by stronger XRD peaks indicating enhanced crystallinity and FT-IR spectra showing characteristic peak broadening and intensity variations that confirm dopant incorporation into the SA lattice. From the EDAX analysis the presence of Cs ions in the SA lattice. The effect of Cs: SA doping on the optical properties of the crystals was investigated by calculating their absorbance and band gap. The grown crystal’s Meyer’s index value indicates that it belongs to the soft material group. Dielectric investigations were carried out to comprehend the diverse polarisation mechanisms at various temperatures. It is clear from the thermal investigation that the crystal dissociates. Doping Cs: SA crystals significantly increased their third-order susceptibility, indicating enhanced nonlinear optical (NLO) properties.

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通过铯掺杂增强氨基磺酸单晶的光学特性，实现先进的 NLO 应用

通过 30°C 的常规生长过程，氨基磺酸产生了块状单晶体（纯的和掺杂铯的 SA）。掺杂铯：SA 显著影响了材料的结构，这体现在更强的 XRD 峰，表明结晶度增强；傅立叶变换红外光谱显示出特征性的峰值拓宽和强度变化，证实了掺杂剂掺入了 SA 晶格。根据 EDAX 分析，SA 晶格中存在铯离子。通过计算晶体的吸光度和带隙，研究了 Cs：SA 掺杂对晶体光学特性的影响。生长出的晶体的迈尔指数值表明它属于软材料组。为了理解不同温度下的不同极化机制，还进行了介电调查。热研究表明，晶体会发生解离。掺杂铯：SA 晶体显著提高了其三阶电感，表明其非线性光学（NLO）特性得到增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.