Synthesis and electrochemical potentials of composite materials based on CrxV2−xO/S–g–C3N4 for supercapacitor electrodes

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fatima Munir, Zaheer Hussain Shah, Mohsin Javed, Sana Mansoor, Muhammad Tahir, Sajid Mahmood, Rabia Nawaz, Ammar Zidan, Muhammad Imran, Shahid Iqbal, Abd-ElAziem Farouk, Salman Aloufi, Toheed Akhter
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引用次数: 0

Abstract

A series of CrxV2−xO4 materials with varying ratios of vanadium and chromium (1:1, 0.75:1.25, 0.5:1.5, 0.25:1.75) and novel CrxV2−xO4 were synthesized. The co-incorporation of sulfur-doped graphitic carbon nitride (S–g–C3N4) with vanadium oxide and chromium for supercapacitor applications has not, as far as we are aware, been considered. Based on a comparative study of the XRD spectra, the produced nanocrystallites are of the monoclinic phase, with an average size of 67 nm. A very high specific capacitance of 554 F/g is shown by the Cr0. 25V1.75O4-based electrode at a current intensity of 1 A/g, according to the CV, GCD, and EIS tests conducted in 2 M KOH aqueous electrolyte. Conversely, the composite 50% Cr0.25V1.75O4@S–gC3N4-based electrode exhibits a specific capacitance of 717 F/g at 1 A/g current density. Accordingly, the addition of S–g–C3N4, which has an increased surface area and porosity, results in a larger specific capacitance of this new electrode material than the previous one. Furthermore, as shown by the EIS plots below, both the parent sample and the composite have low charge transfer resistance and high conductivity.

用于超级电容器电极的基于 CrxV2-xO/S-g-C3N4 的复合材料的合成和电化学势
合成了一系列不同钒铬比例(1:1、0.75:1.25、0.5:1.5、0.25:1.75)的 CrxV2-xO4 材料和新型 CrxV2-xO4 材料。据我们所知,目前还没有人考虑过将硫掺杂的氮化石墨碳(S-g-C3N4)与氧化钒和铬共同掺杂用于超级电容器。根据对 XRD 光谱的比较研究,制得的纳米晶为单斜相,平均尺寸为 67 纳米。根据在 2 M KOH 水电解液中进行的 CV、GCD 和 EIS 测试,在电流强度为 1 A/g 时,基于 Cr0.相反,50% Cr0.25V1.75O4@S-gC3N4 基复合电极在 1 A/g 电流密度下的比电容为 717 F/g。因此,S-g-C3N4 的加入增加了表面积和孔隙率,使这种新型电极材料的比电容比以前的电极材料更大。此外,如下文的 EIS 图所示,母体样品和复合材料都具有较低的电荷转移电阻和较高的电导率。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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