Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-26 DOI:10.1007/s10854-024-13706-x

D. D. Meng, Y. R. Liu, D. Y. Su, X. Y. Ren, K. P. Su, H. O. Wang, L. Yang, S. Huang

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引用次数: 0

Abstract

DO₁₉-ordered Mn₃Ga gained much attention recently due to their potential application in spintronic devices. However, there still remain several challenges to overcome before their practical application. We have studied the structural, magnetic, and transport properties of polycrystalline Mn₃Ga_0.8Ge_0.2. It was found that Ge-doped Mn₃Ga ingot undergoes a spin reorientation transition from a coplanar antiferromagnetic to a noncoplanar configuration of Mn moments at around 200 K, accompanied by the competition among magnetocrystalline anisotropy, ferromagnetic interaction, and antiferromagnetic coupling. Compared with other reports on polycrystalline Mn₃Ga, the Mn₃Ga_0.8Ge_0.2 alloy in our work has a higher spin reorientation transition temperature, which is related to the lattice distortion caused by Ge doping. The anomalous Hall effect can be observed from 10 to 350 K and the Hall resistivity at room temperature is 0.641 μΩ cm. An apparent topological Hall effect (THE) was observed simultaneously in the hexagonal non-collinear polycrystalline Mn₃Ga_0.8Ge_0.2 ingots below 200 K. The origin of the present THE is attributed to the non-collinear triangular magnetic configuration with slight distortion. The maximum value of topological Hall resistivity can reach a value of about 0.242 μΩ cm at 120 K. Our work provides an approach for topological spintronics applications using Mn₃X-based alloys.

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多晶 Mn3Ga0.8Ge0.2 合金的结构、磁性和传输特性

DO19 有序 Mn3Ga 因其在自旋电子器件中的潜在应用而受到广泛关注。然而，在实际应用之前，仍有一些挑战需要克服。我们研究了多晶 Mn3Ga0.8Ge0.2 的结构、磁性和传输特性。研究发现，掺杂 Ge 的 Mn3Ga 晶锭在 200 K 左右经历了一次自旋重新定向转变，从 Mn 矩的共面反铁磁构型转变为非共面构型，同时伴随着磁晶各向异性、铁磁相互作用和反铁磁耦合之间的竞争。与其他有关多晶 Mn3Ga 的报道相比，我们研究的 Mn3Ga0.8Ge0.2 合金具有更高的自旋重新定向转变温度，这与掺杂 Ge 引起的晶格畸变有关。从 10 到 350 K 都能观察到反常霍尔效应，室温下的霍尔电阻率为 0.641 μΩ cm。在 200 K 以下的六边形非对偶多晶 Mn3Ga0.8Ge0.2 晶棒中同时观察到明显的拓扑霍尔效应（THE）。在 120 K 时，拓扑霍尔电阻率的最大值可达到约 0.242 μΩ cm。我们的工作为使用基于 Mn3X 的合金的拓扑自旋电子学应用提供了一种方法。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.