{"title":"Synthesis and tunable luminescence of BaLaGa3O7:Bi3+/Eu3+ phosphors","authors":"Xuan Gu, Zheng He, Xiao-Yu Sun","doi":"10.1007/s10854-024-13758-z","DOIUrl":null,"url":null,"abstract":"<div><p>A series of Bi<sup>3+</sup> and/or Eu<sup>3+</sup> activated BaLaGa<sub>3</sub>O<sub>7</sub> phosphors were prepared using a high-temperature solid-state sintering technique. The phase and luminescent performance were investigated. The Bi<sup>3+</sup> doped BaLaGa<sub>3</sub>O<sub>7</sub> phosphors display broadband blue emission resulting from the <sup>3</sup>P<sub>1</sub> → <sup>1</sup>S<sub>0</sub> transition. The Eu<sup>3+</sup> doped BaLaGa<sub>3</sub>O<sub>7</sub> phosphors exhibit sharp emission bands in the range of 575–725 nm. Energy transfer from Bi<sup>3+</sup> to Eu<sup>3+</sup> occurs in the BaLaGa<sub>3</sub>O<sub>7</sub>:Bi<sup>3+</sup>/Eu<sup>3+</sup> phosphors, as confirmed by the emission spectra and decay characteristics. The energy transfer results in tunable luminescence and the generation of white light by the BaLaGa<sub>3</sub>O<sub>7</sub>:0.05Bi<sup>3+</sup>/0.05Eu<sup>3+</sup> phosphor. The luminous mechanisms and energy transfer processes of the phosphors were speculated based on the findings of this work and the energy level diagrams of Eu<sup>3+</sup> and Bi<sup>3+</sup> ions. The potential applications of the prepared BaLaGa<sub>3</sub>O<sub>7</sub>:0.05Bi<sup>3+</sup>/0.05Eu<sup>3+</sup> phosphor in white light emitting diodes were also investigated.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13758-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A series of Bi3+ and/or Eu3+ activated BaLaGa3O7 phosphors were prepared using a high-temperature solid-state sintering technique. The phase and luminescent performance were investigated. The Bi3+ doped BaLaGa3O7 phosphors display broadband blue emission resulting from the 3P1 → 1S0 transition. The Eu3+ doped BaLaGa3O7 phosphors exhibit sharp emission bands in the range of 575–725 nm. Energy transfer from Bi3+ to Eu3+ occurs in the BaLaGa3O7:Bi3+/Eu3+ phosphors, as confirmed by the emission spectra and decay characteristics. The energy transfer results in tunable luminescence and the generation of white light by the BaLaGa3O7:0.05Bi3+/0.05Eu3+ phosphor. The luminous mechanisms and energy transfer processes of the phosphors were speculated based on the findings of this work and the energy level diagrams of Eu3+ and Bi3+ ions. The potential applications of the prepared BaLaGa3O7:0.05Bi3+/0.05Eu3+ phosphor in white light emitting diodes were also investigated.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.