Synthesis and tunable luminescence of BaLaGa3O7:Bi3+/Eu3+ phosphors

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xuan Gu, Zheng He, Xiao-Yu Sun
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引用次数: 0

Abstract

A series of Bi3+ and/or Eu3+ activated BaLaGa3O7 phosphors were prepared using a high-temperature solid-state sintering technique. The phase and luminescent performance were investigated. The Bi3+ doped BaLaGa3O7 phosphors display broadband blue emission resulting from the 3P11S0 transition. The Eu3+ doped BaLaGa3O7 phosphors exhibit sharp emission bands in the range of 575–725 nm. Energy transfer from Bi3+ to Eu3+ occurs in the BaLaGa3O7:Bi3+/Eu3+ phosphors, as confirmed by the emission spectra and decay characteristics. The energy transfer results in tunable luminescence and the generation of white light by the BaLaGa3O7:0.05Bi3+/0.05Eu3+ phosphor. The luminous mechanisms and energy transfer processes of the phosphors were speculated based on the findings of this work and the energy level diagrams of Eu3+ and Bi3+ ions. The potential applications of the prepared BaLaGa3O7:0.05Bi3+/0.05Eu3+ phosphor in white light emitting diodes were also investigated.

BaLaGa3O7:Bi3+/Eu3+ 荧光粉的合成与可调发光
采用高温固态烧结技术制备了一系列 Bi3+ 和/或 Eu3+ 活化的 BaLaGa3O7 荧光粉。对其相位和发光性能进行了研究。掺杂 Bi3+ 的 BaLaGa3O7 荧光粉在 3P1 → 1S0 转变过程中显示出宽带蓝色发射。掺杂 Eu3+ 的 BaLaGa3O7 荧光粉在 575-725 纳米范围内显示出尖锐的发射带。BaLaGa3O7:Bi3+/Eu3+ 荧光粉中发生了从 Bi3+ 到 Eu3+ 的能量转移,发射光谱和衰变特性证实了这一点。能量转移导致 BaLaGa3O7:0.05Bi3+/0.05Eu3+ 荧光体产生可调发光和白光。根据这项工作的发现以及 Eu3+ 和 Bi3+ 离子的能级图,推测了荧光粉的发光机制和能量传递过程。此外,还研究了所制备的 BaLaGa3O7:0.05Bi3+/0.05Eu3+ 荧光粉在白光发光二极管中的潜在应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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