V. Jagadeesha Angadi, B. Chethan, K. M. Swathi, Shifa Wang, Nipa Roy, Sang Woo Joo, Vinayak Pattar, Shoyebmohamad F. Shaikh, Chander Prakash, Ashok Kumar, Mohd Ubaidullah, M. Atif
{"title":"Synthesis and study of reduced graphene oxide substituted Bismuth oxide composite towards humidity sensors","authors":"V. Jagadeesha Angadi, B. Chethan, K. M. Swathi, Shifa Wang, Nipa Roy, Sang Woo Joo, Vinayak Pattar, Shoyebmohamad F. Shaikh, Chander Prakash, Ashok Kumar, Mohd Ubaidullah, M. Atif","doi":"10.1007/s10854-024-13745-4","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the characteristics and performance of a composite material comprising bismuth oxide (Bi<sub>2</sub>O<sub>3</sub>) and reduced graphene oxide (rGO) at varying concentrations. The diffraction pattern for un-substituted α-Bi2O3 nanoparticles (NPs) showed major reflections corresponding to rGO crystal faces, with calculated lattice parameters of a = 5.849 Å, b = 8.166 Å, and c = 7.510 Å. The substitution of α-Bi2O3 with rGO preserved the crystalline phase, and the material’s porosity increased with higher rGO concentrations, as verified by XRD and humidity testing. Notably, at a composition of 20% rGO (Bi 0.2), the composite demonstrated a significant reduction in resistance from 11 to 98% relative humidity (RH), showing an exponential decrease. The response time of the sensor was recorded at 9 s, with a recovery time of 12 s. The material exhibited exceptional humidity sensitivity, especially at higher rGO concentrations, making it highly suitable for humidity sensing applications. Furthermore, the sensor demonstrated high stability over a 60-day period, maintaining consistent performance. These findings highlight the potential of the Bi2O3-rGO composite for robust and reliable sensor applications under varying environmental conditions.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13745-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the characteristics and performance of a composite material comprising bismuth oxide (Bi2O3) and reduced graphene oxide (rGO) at varying concentrations. The diffraction pattern for un-substituted α-Bi2O3 nanoparticles (NPs) showed major reflections corresponding to rGO crystal faces, with calculated lattice parameters of a = 5.849 Å, b = 8.166 Å, and c = 7.510 Å. The substitution of α-Bi2O3 with rGO preserved the crystalline phase, and the material’s porosity increased with higher rGO concentrations, as verified by XRD and humidity testing. Notably, at a composition of 20% rGO (Bi 0.2), the composite demonstrated a significant reduction in resistance from 11 to 98% relative humidity (RH), showing an exponential decrease. The response time of the sensor was recorded at 9 s, with a recovery time of 12 s. The material exhibited exceptional humidity sensitivity, especially at higher rGO concentrations, making it highly suitable for humidity sensing applications. Furthermore, the sensor demonstrated high stability over a 60-day period, maintaining consistent performance. These findings highlight the potential of the Bi2O3-rGO composite for robust and reliable sensor applications under varying environmental conditions.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.