Elemental composition optimization to achieve eutectic Au–Sn solder

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2024-10-25 DOI:10.1007/s10854-024-13710-1

Chupong Pakpum, Kanokwan Kanchiang

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Abstract

The loss of some elements during the bonding process causes the overall composition to deviate from the eutectic point, affecting the adhesion’s strength. Experiments were conducted to find suitable conditions via percentage of film thickness ratio (Au thickness/(Au + Sn) thickness) in the 48.72–60.13% range, which corresponds to %Sn in the range of 29–40at% on the binary Au–Sn (Au-rich side) phase diagram. The squeeze-out phenomenon of Sn occurs during heat and pressure between two workpieces that are being welded together and because this element has a lower melting temperature than Au, this results in the preparation of Sn equivalent to 33at%, corresponding to a percentage film thickness ratio of 56%, to obtain the eutectic condition at Sn 29at% when the bonding process is completed. Specimens were prepared with focus ion beam for analysis elements to indicate the phase formation of IMCs and their distribution. The workpiece was prepared with FIB-lamella to study the nanometer structure with the transmission electron microscopy technique and identify the type of crystals formed by the selected area electron diffraction analysis. The adhesion strength was evaluated with all experimental conditions using a shear tester. It was found that the conditions of eutectic provide the highest adhesion strength at 285.20 ± 10.62 MPa.

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优化元素组成，实现共晶金锡焊料

粘合过程中某些元素的损失会导致整体成分偏离共晶点，从而影响粘合强度。为了找到合适的条件，进行了薄膜厚度比（金厚度/（金+锡）厚度）在 48.72-60.13% 范围内的实验，这相当于二元金锡（富金侧）相图上 29-40at% 范围内的锡%。锡的挤出现象发生在两个正在焊接在一起的工件之间的加热和加压过程中，由于这种元素的熔化温度比金低，这就导致制备出相当于 33at% 的锡，相当于 56% 的膜厚百分比率，从而在粘接过程完成时获得锡含量为 29at% 的共晶状态。用聚焦离子束制备试样，用于分析元素，以显示 IMC 的相形成及其分布。使用 FIB-lamella 制备工件，利用透射电子显微镜技术研究纳米结构，并通过选区电子衍射分析确定形成的晶体类型。使用剪切力测试仪评估了所有实验条件下的粘附强度。结果发现，共晶条件下的粘附强度最高，为 285.20 ± 10.62 兆帕。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.