Programmable Online Bond-Wire Fault Detection and Location Method for Insulated Gate Bipolar Transistor Using Inverter Output Parameters

IF 5.6 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Instrumentation and Measurement Pub Date : 2024-10-21 DOI:10.1109/TIM.2024.3472910

Jaewook Oh;Inhwan Kim;Inhyeok Hwang;Bowook Choi;Namsu Kim

{"title":"Programmable Online Bond-Wire Fault Detection and Location Method for Insulated Gate Bipolar Transistor Using Inverter Output Parameters","authors":"Jaewook Oh;Inhwan Kim;Inhyeok Hwang;Bowook Choi;Namsu Kim","doi":"10.1109/TIM.2024.3472910","DOIUrl":null,"url":null,"abstract":"Prognostics and health monitoring of insulated gate bipolar transistors (IGBTs) is a primary concern when determining the reliability of inverter systems. The rising popularity of electric vehicles (EVs) has increased the investigations on the reliability of power modules, particularly that of IGBTs. Condition monitoring of IGBT can be performed using various IGBT characteristic parameters, such as collector-emitter saturation voltage (\n<inline-formula> <tex-math>${V} _{\\text {ce,sat}}$ </tex-math></inline-formula>\n), collector current (\n<inline-formula> <tex-math>${I} _{\\text {C}}$ </tex-math></inline-formula>\n), and gate-emitter threshold voltage (\n<inline-formula> <tex-math>${V} _{\\text {ge,th}}$ </tex-math></inline-formula>\n). This study proposes a programmable method for detecting and pinpointing the location of bond-wire lift-off without accessing the gate signal or the collector and emitter terminals of the targeted IGBT chip or freewheeling diode (FWD). The methodology of collecting and processing the collector-emitter voltage data from the three-phase motor phase terminal voltage is discussed. The proposed approach is validated through simulations of a motor drive system, and its adaptability and sensitivity are confirmed through fault emulation tests and power cycling tests in actual motor drive systems.","PeriodicalId":13341,"journal":{"name":"IEEE Transactions on Instrumentation and Measurement","volume":null,"pages":null},"PeriodicalIF":5.6000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Instrumentation and Measurement","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10726721/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Prognostics and health monitoring of insulated gate bipolar transistors (IGBTs) is a primary concern when determining the reliability of inverter systems. The rising popularity of electric vehicles (EVs) has increased the investigations on the reliability of power modules, particularly that of IGBTs. Condition monitoring of IGBT can be performed using various IGBT characteristic parameters, such as collector-emitter saturation voltage (

${V} _{\text {ce,sat}}$

), collector current (

${I} _{\text {C}}$

), and gate-emitter threshold voltage (

${V} _{\text {ge,th}}$

). This study proposes a programmable method for detecting and pinpointing the location of bond-wire lift-off without accessing the gate signal or the collector and emitter terminals of the targeted IGBT chip or freewheeling diode (FWD). The methodology of collecting and processing the collector-emitter voltage data from the three-phase motor phase terminal voltage is discussed. The proposed approach is validated through simulations of a motor drive system, and its adaptability and sensitivity are confirmed through fault emulation tests and power cycling tests in actual motor drive systems.

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使用逆变器输出参数的绝缘栅双极晶体管可编程在线键合线故障检测和定位方法

绝缘栅双极晶体管（IGBT）的诊断和健康监测是确定逆变器系统可靠性的首要问题。随着电动汽车（EV）的日益普及，对功率模块，尤其是 IGBT 可靠性的研究也越来越多。对 IGBT 的状态监测可以使用各种 IGBT 特性参数，如集电极-发射极饱和电压（${V} _{\text {ce,sat}}$ ）、集电极电流（${I} _{\text {C}}$ ）和栅极-发射极阈值电压（${V} _{\text {ge,th}}$ ）。本研究提出了一种可编程方法，无需访问目标 IGBT 芯片或续流二极管（FWD）的栅极信号或集电极和发射极，即可检测并精确定位键合丝脱落的位置。本文讨论了从三相电机相端电压收集和处理集电极-发射极电压数据的方法。通过对电机驱动系统的仿真验证了所提出的方法，并通过实际电机驱动系统的故障仿真测试和功率循环测试确认了该方法的适应性和灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Instrumentation and Measurement 工程技术-工程：电子与电气

CiteScore

9.00

自引率

23.20%

发文量

1294

审稿时长

3.9 months

期刊介绍： Papers are sought that address innovative solutions to the development and use of electrical and electronic instruments and equipment to measure, monitor and/or record physical phenomena for the purpose of advancing measurement science, methods, functionality and applications. The scope of these papers may encompass: (1) theory, methodology, and practice of measurement; (2) design, development and evaluation of instrumentation and measurement systems and components used in generating, acquiring, conditioning and processing signals; (3) analysis, representation, display, and preservation of the information obtained from a set of measurements; and (4) scientific and technical support to establishment and maintenance of technical standards in the field of Instrumentation and Measurement.