Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.

IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL
Micromachines Pub Date : 2024-09-24 DOI:10.3390/mi15101178
Jiankai Xu, Lijuan Jiang, Ping Cai, Chun Feng, Hongling Xiao, Xiaoliang Wang
{"title":"Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.","authors":"Jiankai Xu, Lijuan Jiang, Ping Cai, Chun Feng, Hongling Xiao, Xiaoliang Wang","doi":"10.3390/mi15101178","DOIUrl":null,"url":null,"abstract":"<p><p>The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0000,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509565/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micromachines","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.3390/mi15101178","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The GaN photoconductive semiconductor switches (PCSSs) with low leakage current and large on-state current are suitable for several applications, including fast switching and high-power electromagnetic pulse equipment. This paper demonstrates a high-power GaN lateral PCSS device. An output peak current of 142.2 A is reached with an input voltage of 10.28 kV when the GaN lateral PCSS is intrinsically triggered. In addition, the method of retaining the AlGaN/GaN heterostructure between electrodes on PCSSs is proposed, which results in increasing the output peak current of the PCSS. The damage mechanism of the PCSS caused by a high electric field and high excitation laser energy is analyzed. The obtained results show that the high heat generated by the large current leads to the decomposition of GaN, and thus, the Ga forms a metal conductive path, resulting in the failure of the device.

基于碳化硅衬底的氮化镓光电导半导体开关的特性研究与损伤分析
具有低漏电流和大导通电流的氮化镓光电导半导体开关(PCSS)适用于多种应用,包括快速开关和大功率电磁脉冲设备。本文展示了一种大功率氮化镓横向 PCSS 器件。当 GaN 横向 PCSS 采用本征触发时,输入电压为 10.28 kV,输出峰值电流可达 142.2 A。此外,还提出了在 PCSS 的电极之间保留 AlGaN/GaN 异质结构的方法,从而提高了 PCSS 的输出峰值电流。分析了高电场和高激发激光能量对 PCSS 造成的损坏机制。结果表明,大电流产生的高热导致 GaN 分解,从而使 Ga 形成金属导电路径,导致器件失效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Micromachines
Micromachines NANOSCIENCE & NANOTECHNOLOGY-INSTRUMENTS & INSTRUMENTATION
CiteScore
5.20
自引率
14.70%
发文量
1862
审稿时长
16.31 days
期刊介绍: Micromachines (ISSN 2072-666X) is an international, peer-reviewed open access journal which provides an advanced forum for studies related to micro-scaled machines and micromachinery. It publishes reviews, regular research papers and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信