Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Sangsik Park, Seung Hyun Kim, Hansol Lee, Kilwon Cho
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Abstract

Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs.

Abstract Image

Abstract Image

应变电荷捕获及其对聚合物场效应晶体管工作稳定性的影响
尽管可拉伸有机场效应晶体管(FET)的电子特性最近有了显著改善,但其较低的工作稳定性仍然是其实际应用的瓶颈。本文研究了基于半导体聚合物的场效应晶体管在各种拉伸应变下的工作稳定性,尤其是偏压稳定性。对拉伸半导体聚合物薄膜结构的分析以及对其内部俘获电荷的光谱量化揭示了场效应晶体管随应变变化的偏压不稳定性的主要原因。应变较大的器件比应变较小的器件稳定性要低,原因是含水量增加,同时在半导体聚合物薄膜中形成裂缝和纳米级空腔,这是施加应变的结果。通过对器件进行钝化以避免水分子渗透,可以消除可拉伸 OFET 偏压稳定性的应变依赖性。这项研究为开发偏压稳定的拉伸型 OFET 提供了新的思路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
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