Engineering of in-plane SnS₂-SnO₂ nanosheets heterostructures for enhanced H₂S sensing.

IF 5.6 1区化学 Q1 CHEMISTRY, ANALYTICAL

Talanta Pub Date : 2025-01-01 Epub Date: 2024-10-16 DOI:10.1016/j.talanta.2024.127059

Xuan-Yu Yang, Jian-Yong Yuan, Yang Ye, Li-Juan Yue, Fei-Long Gong, Ke-Feng Xie, Yong-Hui Zhang

{"title":"Engineering of in-plane SnS2-SnO2 nanosheets heterostructures for enhanced H2S sensing.","authors":"Xuan-Yu Yang, Jian-Yong Yuan, Yang Ye, Li-Juan Yue, Fei-Long Gong, Ke-Feng Xie, Yong-Hui Zhang","doi":"10.1016/j.talanta.2024.127059","DOIUrl":null,"url":null,"abstract":"In-plane heterostructures has attracted considerable interest due to exceptional electron transport properties, high specific surface area, and abundant active sites. However, synthesis of in-plane SnS2-SnO2 heterostructures are rarely reported, and the deep investigation of the fine structure on reactivity is of great significance. Here, we propose partial in-situ oxidation strategy to construct the in-plane SnS2-SnO2 heterostructures and the surface properties, the ratio of two components can be finely tuned by precisely adjusting the treatment temperature. In particular, the SnS2-SnO2 heterostructures formed after annealing of SnS2 nanosheets at 350 °C exhibits a unique electronic structure and surface properties due to rich grain boundaries, which exhibits excellent gas sensing performance to H2S (Ra/Rg = 169.81 for 5 ppm H2S at 160 °C, fast response and recovery dynamic (41/101 s), excellent reliability (σ = 0.01) and sensing stability (φ = 0.11 %)). Notably, the in-plane heterostructures endow the material with abundant grain boundaries and effectively regulates the electronic structure of the Sn p-orbital, which facilitate the formation of active oxygen species (O-(ad)), thus contributing to the sensing performance. Our work provides a promising platform to design in-plane heterostructures for various advanced applications.","PeriodicalId":435,"journal":{"name":"Talanta","volume":"282 ","pages":"127059"},"PeriodicalIF":5.6000,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Talanta","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1016/j.talanta.2024.127059","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/10/16 0:00:00","PubModel":"Epub","JCR":"Q1","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}

引用次数: 0

Abstract

In-plane heterostructures has attracted considerable interest due to exceptional electron transport properties, high specific surface area, and abundant active sites. However, synthesis of in-plane SnS₂-SnO₂ heterostructures are rarely reported, and the deep investigation of the fine structure on reactivity is of great significance. Here, we propose partial in-situ oxidation strategy to construct the in-plane SnS₂-SnO₂ heterostructures and the surface properties, the ratio of two components can be finely tuned by precisely adjusting the treatment temperature. In particular, the SnS₂-SnO₂ heterostructures formed after annealing of SnS₂ nanosheets at 350 °C exhibits a unique electronic structure and surface properties due to rich grain boundaries, which exhibits excellent gas sensing performance to H₂S (R_a/R_g = 169.81 for 5 ppm H₂S at 160 °C, fast response and recovery dynamic (41/101 s), excellent reliability (σ = 0.01) and sensing stability (φ = 0.11 %)). Notably, the in-plane heterostructures endow the material with abundant grain boundaries and effectively regulates the electronic structure of the Sn p-orbital, which facilitate the formation of active oxygen species (O^-(ad)), thus contributing to the sensing performance. Our work provides a promising platform to design in-plane heterostructures for various advanced applications.

查看原文本刊更多论文

设计平面内 SnS2-SnO2 纳米片异质结构以增强 H2S 传感。

面内异质结构具有优异的电子传输性能、高比表面积和丰富的活性位点，因此引起了广泛的关注。然而，面内 SnS2-SnO2 异质结构的合成却鲜有报道，深入研究其精细结构对反应活性的影响意义重大。在此，我们提出了部分原位氧化策略来构建面内SnS2-SnO2异质结构及其表面性质，通过精确调节处理温度可以微调两种组分的比例。其中，SnS2 纳米片在 350 ℃ 退火后形成的 SnS2-SnO2 异质结构因其丰富的晶界而呈现出独特的电子结构和表面特性，对 H2S 具有优异的气体传感性能（160 ℃ 时 5 ppm H2S 的 Ra/Rg = 169.81，快速响应和动态恢复（41/101 s），优异的可靠性（σ = 0.01）和传感稳定性（φ = 0.11 %））。值得注意的是，面内异质结构使材料具有丰富的晶界，并有效调节了锡 p-轨道的电子结构，从而促进了活性氧物种（O-(ad)）的形成，从而提高了传感性能。我们的工作为设计用于各种先进应用的面内异质结构提供了一个前景广阔的平台。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Talanta 化学-分析化学

CiteScore

12.30

自引率

4.90%

发文量

861

审稿时长

29 days

期刊介绍： Talanta provides a forum for the publication of original research papers, short communications, and critical reviews in all branches of pure and applied analytical chemistry. Papers are evaluated based on established guidelines, including the fundamental nature of the study, scientific novelty, substantial improvement or advantage over existing technology or methods, and demonstrated analytical applicability. Original research papers on fundamental studies, and on novel sensor and instrumentation developments, are encouraged. Novel or improved applications in areas such as clinical and biological chemistry, environmental analysis, geochemistry, materials science and engineering, and analytical platforms for omics development are welcome. Analytical performance of methods should be determined, including interference and matrix effects, and methods should be validated by comparison with a standard method, or analysis of a certified reference material. Simple spiking recoveries may not be sufficient. The developed method should especially comprise information on selectivity, sensitivity, detection limits, accuracy, and reliability. However, applying official validation or robustness studies to a routine method or technique does not necessarily constitute novelty. Proper statistical treatment of the data should be provided. Relevant literature should be cited, including related publications by the authors, and authors should discuss how their proposed methodology compares with previously reported methods.