Flexographic printed microwave-assisted grown zinc oxide nanostructures for sensing applications.

Abstract

The development of flexible electronics has increased the demand for wearable pressure sensors that can be used to monitor various biomedical signals. In this context, pressure sensors based on zinc oxide (ZnO) have great potential since, besides the biocompatibility and biodegradability of this metal oxide, it also has piezoelectric properties. The common feature of these sensors is the alignment of the ZnO nanostructures in the strain direction. This alignment is achieved through a three-stage procedure: deposition of a ZnO nanoparticle layer (seed layer) followed by its patterning and the subsequent growth of nanostructures from the seed layer nanoparticles. Herein, a process compatible with industrial scale for depositing seed layers by flexographic printing is proposed, allowing seed layers to be deposited and patterned swiftly and efficiently in a single step on flexible indium tin oxide coated polyethylene terephthalate substrates, significantly decreasing the time and cost required to produce pressure sensors. The growth conditions of ZnO nanorods on these substrates were also studied to analyze their influence on the morphological and structural characteristics of the nanostructures. Nanorods with length of (0.27 ± 0.04) μm and density of (296 ± 6) nanorods per μm² were obtained in microwave-assisted hydrothermal syntheses carried out at 100 °C for 30 min, with a 1 M zinc acetate seed layer and using an equimolar growth solution of zinc nitrate and hexamethylenetetramine. These conditions were used to produce ZnO-based pressure sensors with two patterns (one square and 16 individual squares). Although the single square sensors displayed a higher average output voltage ((12 ± 5) V for an impact pressure of 150 kPa), their response was considerably more variable than the patterned sensors (with 16 squares), which displayed an average output voltage of (8 ± 2) V under an applied pressure of 150 kPa and sensitivity values of (0.06 ± 0.01) V kPa^-1, demonstrating their potential for wearables and portable electronics.