Spectrum of Tunneling Transport through Phonon-Coupled Defect States in a Carbon-Doped Hexagonal Boron Nitride Barrier

IF 9.6 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2024-10-21 DOI:10.1021/acs.nanolett.4c03847

Yuta Seo, Yuki Tsuji, Momoko Onodera, Rai Moriya, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida

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Abstract

Defects in hexagonal boron nitride (h-BN) play important roles in tunneling transport through the h-BN barrier. Here, using carbon-doped h-BN (h-BN:C) as a tunnel barrier containing defects in a controlled manner, we investigated tunneling transport through defects in the h-BN:C/graphene heterostructures. Defect-assisted tunneling through a specific kind of carbon-related defect was observed in all measured devices, where the defect level was always located at ∼0.1 eV above the graphene’s charge neutrality point. We revealed a phonon-assisted inelastic process in the defect-assisted tunneling, in which carriers tunnel through the defect with phonon emission. Furthermore, when the h-BN:C barrier was thick (12 layers, ∼4 nm), sequential tunneling through two defects became dominant, where the phonon-assisted inelastic process shows substantial effects between the two defects. This study reveals the contribution of phonons to defect-assisted tunneling transport, which is essential for the development of defect-related van der Waals (vdW) electronic techniques.

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掺碳六方氮化硼势垒中通过声子耦合缺陷态的隧道传输频谱

六方氮化硼（h-BN）中的缺陷在通过 h-BN 势垒的隧道传输中起着重要作用。在这里，我们使用掺碳 h-BN（h-BN:C）作为隧道势垒，以受控方式含有缺陷，研究了 h-BN:C/ 石墨烯异质结构中通过缺陷的隧道传输。在所有测得的器件中都观察到了通过一种特定的碳相关缺陷的缺陷辅助隧道传输，缺陷水平始终位于石墨烯电荷中性点上方 ∼0.1 eV。我们揭示了缺陷辅助隧穿中的声子辅助非弹性过程，其中载流子在声子发射的作用下通过缺陷隧穿。此外，当 h-BN:C 势垒很厚（12 层，4 纳米）时，通过两个缺陷的顺序隧道成为主导，其中声子辅助非弹性过程在两个缺陷之间显示出实质性的影响。这项研究揭示了声子对缺陷辅助隧道传输的贡献，这对发展与缺陷相关的范德华（vdW）电子技术至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.