Enhanced Weighted Mobility Induced High Thermoelectric Performance in Argyrodite Ag8SnSe6

IF 8.3 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2024-10-21 DOI:10.1021/acsami.4c14311

Siqi Lin, Yuzhu Hou, Ju Yang, Pengfei Fan, Shoumei Liu, Linlin Guo, Min Jin

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Abstract

The argyrodite family has emerged as a promising thermoelectric candidate due to its highly diffusive Ag ions and inherent low thermal conductivity. To address issues that commonly arise with hot pressing (HP) sintering, this study proposes to use the zone melting (ZM) method to synthesize high-density polycrystalline bulk Ag₈SnSe₆ samples. The thermoelectric properties of samples synthesized by the ZM and HP methods were thoroughly evaluated over a temperature range of 300 to 700 K. Due to the weaker scattering of electrons, the ZM-synthesized samples exhibited an ∼60% increase in weighted mobility, compared to those produced by the HP method. Despite the slight increase in thermal conductivity, the specimen synthesized by the ZM method achieves a higher peak zT value of 1.05 at 700 K. The average zT value also improves to 0.71 across the temperature range of 300 to 700 K. This work demonstrates the effectiveness of the ZM method in enhancing the thermoelectric performance of Ag₈SnSe₆, with great potential applicability to other argyrodite compounds.

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增强加权迁移率诱导 Argyrodite Ag8SnSe6 的高热电性能

由于其高度扩散的银离子和固有的低热导率，箭石系列已成为一种有前途的热电候选材料。为了解决热压（HP）烧结通常会出现的问题，本研究建议使用区熔法（ZM）合成高密度多晶块状 Ag8SnSe6 样品。在 300 至 700 K 的温度范围内，对用 ZM 和 HP 方法合成的样品的热电性能进行了全面评估。由于电子散射较弱，ZM 方法合成的样品的加权迁移率比 HP 方法合成的样品提高了 60%。尽管热导率略有增加，但用 ZM 方法合成的样品在 700 K 时达到了更高的 zT 峰值 1.05，在 300 至 700 K 的温度范围内，平均 zT 值也提高到了 0.71。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.