Investigating the mechanism of time dependent evolution of vertical graphene nanowalls

IF 6.9 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Hari Singh, Sujay Chakravarty, P.A. ManojKumar, Sujoy Sen, S. Amirthapandian, R. Govindaraj, Azat Khadiev
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引用次数: 0

Abstract

This work presents a time dependent multistage growth model for vertical graphene nanowalls (VGN). Factors mediating growth of VGN in both vertical and spatial direction at different stages were discussed. VGN films were deposited on Si (100) substrate using Radio Frequency Plasma-Enhanced Chemical Vapor Deposition technique by increasing the deposition time systematically for 15 min, 30 min, 60 min, 120 min, and 240 min, respectively. Scanning electron microscopy was carried out in both planar and cross section view to confirm the growth of VGN and quantification of its height. Atomic force microscopy was used to characterize the spatial growth of VGN. Raman scattering and in-plane GIXRD measurements were carried out to characterize the microstructure of VGN, which unveils that the strain relaxation and defects annihilation followed by increase in average crystallite size plays crucial role. Eventually, a schematic diagram was presented for time dependent evolution of VGN at different stages.

Abstract Image

研究垂直石墨烯纳米墙随时间演变的机理
这项研究提出了垂直石墨烯纳米墙(VGN)随时间变化的多阶段生长模型。文中讨论了不同阶段 VGN 在垂直和空间方向上的生长因素。采用射频等离子体增强化学气相沉积技术在 Si (100) 基底上沉积了垂直石墨烯纳米墙薄膜,沉积时间分别为 15 分钟、30 分钟、60 分钟、120 分钟和 240 分钟。通过扫描电子显微镜观察平面和横截面,确认 VGN 的生长情况并量化其高度。原子力显微镜用于表征 VGN 的空间生长。拉曼散射和平面内 GIXRD 测量对 VGN 的微观结构进行了表征,揭示了应变松弛和缺陷湮灭以及平均晶粒尺寸的增大起着至关重要的作用。最后,还展示了 VGN 在不同阶段随时间变化的示意图。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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