Zhiguo Yu;Donghe Tu;Wei Yan;Huan Guan;Lei Jiang;Xuejiao Sun;Zhiyong Li
{"title":"120 GHz Sub-2 V Thin-Film Lithium Niobate Modulators on Silicon Substrate Using Thick Capacitively Loaded Slow Wave Electrodes","authors":"Zhiguo Yu;Donghe Tu;Wei Yan;Huan Guan;Lei Jiang;Xuejiao Sun;Zhiyong Li","doi":"10.1109/JPHOT.2024.3477311","DOIUrl":null,"url":null,"abstract":"Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links. Recently, thin-film lithium niobate (TFLN) modulators with sub-1 V voltage and 140 GHz bandwidth have been emerged on the low permittivity substrates, such as quartz. However, on the high permittivity environment, such as silicon substrates, the bandwidth dramatically reduced to below 100 GHz even if the voltage was raised to around 3 V. We break the voltage–bandwidth trade-off limit in TFLN modulators on silicon substrates using low inductance thick metal traveling wave electrodes, which reduce RF phase index and microwave losses while preserving high EO modulation efficiency. We demonstrate a TFLN EO modulator on silicon substrate with 3 dB EO bandwidth \n<inline-formula><tex-math>$>$</tex-math></inline-formula>\n 120 GHz and half-wave voltage \n<inline-formula><tex-math>$(V_\\pi) < $</tex-math></inline-formula>\n 2 V. Bandwidth/\n<inline-formula><tex-math>$V_\\pi$</tex-math></inline-formula>\n reach 60, which is significantly larger than traditional TFLN modulators. The proposed thin-film lithium niobate modulators offers a practical solution for the hybrid integration of silicon and lithium niobate.","PeriodicalId":13204,"journal":{"name":"IEEE Photonics Journal","volume":"16 6","pages":"1-5"},"PeriodicalIF":2.1000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10711217","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Journal","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10711217/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Electro-optic modulators with large bandwidth and low voltage are crucial for the high-baud-rate digital communication and high-carrier-frequency analog links. Recently, thin-film lithium niobate (TFLN) modulators with sub-1 V voltage and 140 GHz bandwidth have been emerged on the low permittivity substrates, such as quartz. However, on the high permittivity environment, such as silicon substrates, the bandwidth dramatically reduced to below 100 GHz even if the voltage was raised to around 3 V. We break the voltage–bandwidth trade-off limit in TFLN modulators on silicon substrates using low inductance thick metal traveling wave electrodes, which reduce RF phase index and microwave losses while preserving high EO modulation efficiency. We demonstrate a TFLN EO modulator on silicon substrate with 3 dB EO bandwidth
$>$
120 GHz and half-wave voltage
$(V_\pi) < $
2 V. Bandwidth/
$V_\pi$
reach 60, which is significantly larger than traditional TFLN modulators. The proposed thin-film lithium niobate modulators offers a practical solution for the hybrid integration of silicon and lithium niobate.
期刊介绍:
Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.