From Pb-based MAPbI3−xClx to Pb-free FASnI3−xClx and CsSbCl4 derivatives fabrication in atmospheric conditions for optoelectronic and solar cell applications

IF 10.7 Q1 CHEMISTRY, PHYSICAL
EcoMat Pub Date : 2024-10-07 DOI:10.1002/eom2.12489
M. Kamruzzaman, Md. Faruk Hossain, J. Antonio Zapien, A. M. M. Tanveer Karim, H. N. Das, M. A. Helal
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引用次数: 0

Abstract

MAPbI3 is the most attractive perovskite, but toxicity and instability issues hinder its commercial applications. Stability can be improved by halide mixing; however, Pb-free perovskites are designed to alleviate the toxicity and to enable green photovoltaics (PVs). To this end, MAPbI3-xClx, FASnI3-xClx and CsSbCl4 films are deposited by spay pyrolysis technique in atmospheric conditions. SEM images demonstrated that through this process, high quality film fabrication is possible. Color of the precursor solutions changes with stirring time. High crystallinity and existence of mixed-phases are confirmed by XRD analysis. Compositions greatly impact the morphology and optical properties. Value of α is larger than 105 cm−1 for all films. Band gaps of FASnI3-xClx and CsSbCl4 are 1.46 eV and 1.52 eV, which are more suitable for PVs, optoelectronic applications than MAPbI3-xClx (Eg = 1.59 eV). The efficiency was obtained as 16.34%, 9.90%, and 13.08% for deposited MAPbI3-xClx, FASnI3-xClx, and CsSbCl4 films. The lower efficiency can further be enhanced by optimizing parameters, and in this study it was found as 20.78%, 11.93%, and 18.02%. Theoretical calculations show the films can easily produce O2 by a strong oxidation process. Thus, the favorable characteristics of FASnI3-xClx and CsSbCl4 make alternative Pb-free perovskites for PV, electronic, and optoelectronic applications.

在大气条件下从铅基 MAPbI3-xClx 到无铅 FASnI3-xClx 和 CsSbCl4 衍生物的制造,用于光电和太阳能电池应用
MAPbI3 是最具吸引力的过氧化物,但毒性和不稳定性问题阻碍了它的商业应用。稳定性可以通过卤化物混合来改善;然而,无铅过氧化物的设计是为了减轻毒性并实现绿色光伏(PV)。为此,MAPbI3-xClx、FASnI3-xClx 和 CsSbCl4 薄膜在大气条件下通过溅射热解技术沉积而成。扫描电子显微镜图像表明,通过这种工艺可以制造出高质量的薄膜。前驱体溶液的颜色随搅拌时间而变化。XRD 分析证实了高结晶度和混合相的存在。成分对形态和光学特性有很大影响。所有薄膜的 α 值都大于 105 cm-1。FASnI3-xClx 和 CsSbCl4 的带隙分别为 1.46 eV 和 1.52 eV,与 MAPbI3-xClx 相比(Eg = 1.59 eV),更适合光伏和光电应用。沉积的 MAPbI3-xClx、FASnI3-xClx 和 CsSbCl4 薄膜的效率分别为 16.34%、9.90% 和 13.08%。通过优化参数可以进一步提高较低的效率,本研究发现其效率分别为 20.78%、11.93% 和 18.02%。理论计算表明,薄膜很容易通过强氧化过程产生 O2。因此,FASnI3-xClx 和 CsSbCl4 的有利特性使其成为光伏、电子和光电应用领域的无铅过氧化物替代品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
17.30
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