Characterization and luminescence properties of CaMgGe2O6: Mn2+ NIR-I mechanoluminescence phosphor

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zeqing Zhang, Wei Liu, Lin Li, Huan Li, Zhijun Zhang, Shuai Cheng, Guanghui Rao, Jingtai Zhao
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引用次数: 0

Abstract

In recent years, materials exhibiting multimodal luminescence properties from deep red to near-infrared (NIR) wavelengths have been a focal point of research, particularly in the exploration of applications within the realms of stress sensing and dynamic signature anti-counterfeiting. A pyroxene-type layered crystal structure compound, CaMgGe2O6: Mn2+, has been reported as a mechanoluminescent (ML) material. Upon incorporation into the host, Mn2+ ions preferentially substitute for Mg2+ ions, emitting deep red to near-infrared light (600–800 nm) within this six-coordinated [MgO6] octahedral environment. The congruence of photoluminescence and ML spectra indicates that both types of luminescence originate from the same emissive center. The doping of Mn2+ ions introduces impurity band, effectively reducing the optical band gap, as evidenced by ultraviolet diffuse reflectance measurements. Thermoluminescence results reveal three defect centers within the phosphor, whose concentrations decrease with Mn2+ doping, correlating with a reduction in ML intensity. The ML mechanism of the phosphor is elucidated through the analysis of local piezoelectric properties within the crystal. Overall, this study may pave new pathways for the development of efficient near-infrared mechanoluminescent materials, showcasing potential applications within the biological domain.

CaMgGe2O6:Mn2+ NIR-I 机械发光荧光粉的表征和发光特性
近年来,具有从深红色到近红外波长的多模式发光特性的材料一直是研究的焦点,特别是在探索应力传感和动态签名防伪领域的应用方面。据报道,一种辉石型层状晶体结构化合物 CaMgGe2O6: Mn2+ 是一种机械发光(ML)材料。Mn2+ 离子在加入宿主后,会优先取代 Mg2+ 离子,在这种六配位[MgO6]八面体环境中发出深红到近红外光(600-800 纳米)。光致发光和 ML 光谱的一致性表明,这两种类型的发光都源自同一个发光中心。紫外漫反射测量结果表明,Mn2+ 离子的掺杂引入了杂质带,有效地减小了光带隙。热致发光结果显示,荧光粉中有三个缺陷中心,其浓度随着 Mn2+ 的掺入而降低,这与 ML 强度的降低有关。通过分析晶体内部的局部压电特性,阐明了该荧光粉的 ML 机制。总之,这项研究为开发高效的近红外机械发光材料铺平了新的道路,展示了在生物领域的潜在应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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