Photoluminescence properties of SnO2 nanoparticles doped with group VI elements (Cr, Mo, W) synthesized by pulsed laser ablation in liquid

IF 2.8 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Physica B-condensed Matter Pub Date : 2024-10-12 DOI:10.1016/j.physb.2024.416625

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引用次数: 0

Abstract

Tin oxide nanoparticles (SnO₂ NPs), both pure and doped with Group VI (G6) metal ions (Cr⁺³, Mo⁺⁵, and W⁺⁶), were synthesized using pulsed laser ablation in liquid. This study aimed to investigate the effect of G6 doping on the electronic properties of SnO₂ NPs, with an emphasis on enhancing their photoluminescence for optoelectronic applications. Transmission electron microscopy revealed well-crystallized samples with diameters of 3–6 nm, indicating quantum-confinement effects. The optical band gap, determined by UV–Vis spectroscopy, was reduced from 5.1 eV (undoped) to 4.9 eV (Cr-doped) due to defect states, while increasing to 5.3 eV and 5.7 eV for Mo- and W-doped SnO₂, respectively, due to the Moss-Burstein effect. The photoluminescence spectra exhibited a redshift, with strong red emission around 700 nm, which was up to 90 % more intense than that of the undoped SnO₂. This enhancement was attributed to the ²E→⁴A₂ transition and increased defect states.

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在液体中通过脉冲激光烧蚀合成的掺杂 VI 族元素（铬、钼、钨）的 SnO2 纳米粒子的光致发光特性

本研究利用脉冲激光烧蚀技术在液体中合成了纯氧化锡纳米粒子（SnO2 NPs）和掺杂第六族（G6）金属离子（Cr+3、Mo+5 和 W+6）的氧化锡纳米粒子（SnO2 NPs）。本研究旨在探讨 G6 掺杂对 SnO2 NPs 电子特性的影响，重点是增强其在光电应用中的光致发光性能。透射电子显微镜显示了直径为 3-6 纳米的良好结晶样品，表明其具有量子会聚效应。通过紫外可见光谱测定，由于缺陷态，光带隙从 5.1 eV（未掺杂）减小到 4.9 eV（掺杂铬），而由于莫斯-伯斯坦效应，掺 Mo 和 W 的 SnO2 的光带隙分别增大到 5.3 eV 和 5.7 eV。光致发光光谱表现出红移，在 700 纳米附近有强烈的红色发射，其强度比未掺杂 SnO2 高出 90%。这种增强归因于 2E→4A2 转变和缺陷态的增加。

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来源期刊

Physica B-condensed Matter 物理-物理：凝聚态物理

CiteScore

4.90

自引率

7.10%

发文量

703

审稿时长

44 days

期刊介绍： Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces