Novel 4H–SiC MESFET with high ability in gate capacitances control for high frequency applications

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2024-10-12 DOI:10.1016/j.micrna.2024.207994

Zohreh Roustaei, Ali A. Orouji

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引用次数: 0

Abstract

The ability to control the gate capacitances is crucial for high-frequency applications, as it affects the device's frequency characteristics, gain and power handling capabilities. We present a 4H–SiC metal-semiconductor field-effect transistor (MESFET) with high gate capacitance control ability for high-frequency applications. The proposed structure (GCC-MESFET) consists of a step gate and a SiC well for adjusting the channel depletion layer and modifying the channel charges. Therefore, the gate capacitances will be controlled (GCC-MESFET). The proposed structure significantly improves the cut-off frequency (f_T) and maximum oscillation frequency (f_max). The f_T has increased from 23.5 GHz to 33 GHz and the f_max from 50.1 GHz to 54.4 GHz in the proposed structure compared to a conventional structure (C-MESFET). The results show that the DC maximum output power density (P_max), DC transconductance (g_m), cut-off frequency (f_T) and maximum oscillation frequency (f_max) of GCC-MESFET improve in comparison with a conventional structure (C-MESFET). It is necessary to mention that the drain current and the breakdown voltage of the proposed structure increase by 48 % and 20 % respectively, compared with the C-MESFET structure due to modifying the channel charges and adjusting the electric field. So, the proposed structure can be used for high current, high voltage, high-power and high frequency applications.

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具有高栅极电容控制能力的新型 4H-SiC MESFET，适用于高频应用

控制栅极电容的能力对高频应用至关重要，因为它会影响器件的频率特性、增益和功率处理能力。我们为高频应用提出了一种具有高栅电容控制能力的 4H-SiC 金属半导体场效应晶体管 (MESFET)。所提出的结构（GCC-MESFET）包括一个阶跃栅极和一个用于调整沟道耗尽层和修改沟道电荷的碳化硅阱。因此，栅极电容将得到控制（GCC-MESFET）。所提出的结构大大提高了截止频率（fT）和最大振荡频率（fmax）。与传统结构（C-MESFET）相比，拟议结构的 fT 从 23.5 GHz 提高到 33 GHz，fmax 从 50.1 GHz 提高到 54.4 GHz。结果表明，与传统结构（C-MESFET）相比，GCC-MESFET 的直流最大输出功率密度（Pmax）、直流跨导（gm）、截止频率（fT）和最大振荡频率（fmax）都有所提高。值得一提的是，由于修改了沟道电荷和调整了电场，与 C-MESFET 结构相比，拟议结构的漏极电流和击穿电压分别增加了 48% 和 20%。因此，所提出的结构可用于大电流、高电压、大功率和高频率应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

发文量