Anisotropic magnetic entropy change and magnetic critical behavior in van der Waals Fe3GaTe2

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
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Abstract

Fe3GaTe2, with intrinsic magnetism at ambient temperature and high perpendicular magnetic anisotropy, is a promising van der Waals material for 2D-materials-based spintronic devices. Herein, we report the anisotropic magnetocaloric effects and magnetic critical phenomena in Fe3GaTe2 single crystal. Owing to the large anisotropy, magnetic entropy change (ΔSM) shows anisotropic character with ΔSMmax of 1.67 J kg−1 K−1 along the c axis and 1.11 J kg−1 K−1 in the ab plane under field change of 5 T. The rotating ΔSM from the ab plane to the c axis reaches 0.67 J kg−1 K−1 at magnetic field of 5 T. By carefully fitting the ΔSMmax and relative cooling power (RCP), we determine their relationships to be ΔSMmaxHn (n = 0.694(1)) and RCPHm (m = 1.301(3)) for the magnetic field along the c-axis. Further analysis of critical behavior near TC reveals critical exponents β = 0.41(1) at TC = 341.5(1) K, γ = 1.01(1) at TC = 341.6(3) K, and δ = 3.67(15) at TC = 340 K, indicating a three-dimensional complex magnetic exchange.
范德华Fe3GaTe2中各向异性的磁熵变化和磁临界行为
Fe3GaTe2 在常温下具有本征磁性和高垂直磁各向异性,是一种很有前途的范德华材料,可用于基于二维材料的自旋电子器件。在此,我们报告了 Fe3GaTe2 单晶的各向异性磁致效应和磁临界现象。由于存在较大的各向异性,磁熵变化(-ΔSM)呈现出各向异性的特征,在磁场变化为 5 T 时,沿 c 轴的-ΔSM 最大值为 1.67 J kg-1 K-1,在 ab 平面上为 1.11 J kg-1 K-1。通过仔细拟合-ΔSMmax 和相对冷却功率 (RCP),我们确定它们在沿 c 轴的磁场中的关系为 -ΔSMmax∝Hn (n = 0.694(1)) 和 RCP∝Hm (m = 1.301(3))。对 TC 附近临界行为的进一步分析表明,在 TC = 341.5(1) K 时,临界指数 β = 0.41(1);在 TC = 341.6(3) K 时,临界指数 γ = 1.01(1);在 TC = 340 K 时,临界指数 δ = 3.67(15),表明存在三维复合磁交换。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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