{"title":"Low temperature bonding process for Bi2Te3/Si heterojunctions","authors":"Kaixuan Wang, Chaogang Lou, Jiayin Kang","doi":"10.1007/s00339-024-07970-1","DOIUrl":null,"url":null,"abstract":"<div><p>The bonding between Bi<sub>2</sub>Te<sub>3</sub> and Si wafers is prepared under low temperature through forming Si-O-Te and Si-O-Bi. Under the irradiation of vacuum ultraviolet, oxygen radicals and ozone are formed from oxygen molecules, which produces the thin oxide layers on the wafers’ surfaces. By absorbing water molecules and by dehydration-condensation reaction, the bonds of Si-O-Te and Si-O-Bi are formed. During the annealing process, Te atoms more easily diffuse into Si wafers than Bi atoms because the surface of Bi<sub>2</sub>Te<sub>3</sub> is terminated with Te atoms. The layered crystal structure of Bi<sub>2</sub>Te<sub>3</sub> weakens the bonding strength because only the surface layer of Bi<sub>2</sub>Te<sub>3</sub> can bond with Si. The fabricated Bi<sub>2</sub>Te<sub>3</sub>/Si heterojunctions have the typical I-V curve of PN junctions.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":null,"pages":null},"PeriodicalIF":2.5000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-024-07970-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The bonding between Bi2Te3 and Si wafers is prepared under low temperature through forming Si-O-Te and Si-O-Bi. Under the irradiation of vacuum ultraviolet, oxygen radicals and ozone are formed from oxygen molecules, which produces the thin oxide layers on the wafers’ surfaces. By absorbing water molecules and by dehydration-condensation reaction, the bonds of Si-O-Te and Si-O-Bi are formed. During the annealing process, Te atoms more easily diffuse into Si wafers than Bi atoms because the surface of Bi2Te3 is terminated with Te atoms. The layered crystal structure of Bi2Te3 weakens the bonding strength because only the surface layer of Bi2Te3 can bond with Si. The fabricated Bi2Te3/Si heterojunctions have the typical I-V curve of PN junctions.
期刊介绍:
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.