Numerical Analysis and Design of a High-Frequency Surface Acoustic Wave Transducer: Influence of Piezoelectric Substrates and IDTs Configurations

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Alonso Fernández-García, Verónica Iraís Solís-Tinoco, Miguel Ángel Alemán Arce, Luis Alfonso Villa-Vargas, Marco Antonio Ramírez Salinas, Juan Carlos Sánchez García
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引用次数: 0

Abstract

The development of SAW transducers requires a series of steps ranging from material selection and geometry design to the selection of fabrication techniques for their characterization and validation process. Here, we use the finite element method (FEM) to present a methodology and a detailed analysis of the design of SAW transducers in a delay line configuration. First, we simulate single-finger and double-finger configurations with different geometries and designs of IDTs on two piezoelectric substrates, LiNbO 3 $$ {}_3 $$ in 64 ° $$ {}^{{}^{\circ}} $$ YX and LiNbO 3 $$ {}_3 $$ 128 ° $$ {}^{{}^{\circ}} $$ YX orientation, to compare the simulation results with the analytical delta model and thereby validate the simulation process, presenting Root Mean Square Error (RMSE) values ranging from 10.79 dB to 16.42 dB. With the above, we performed a comparative analysis to determine the influence of piezoelectric material and IDT configuration by studying a specific transducer design made to operate at a resonance frequency of 97.02 MHz. We compared identical designs on 128 ° $$ {}^{{}^{\circ}} $$ YX and 64 ° $$ {}^{{}^{\circ}} $$ YX orientations of LiNbO 3 $$ {}_3 $$ with single and double-finger configurations and added the comparison with the SPUDT configuration. We observed the best results for the single-finger IDT configuration in 128 ° $$ {}^{{}^{\circ}} $$ YX LiNbO 3 $$ {}_3 $$ orientation compared to the other variants through its insertion loss level of −7.29 dB, its average sidelobe level of −18.63 dB, and its average transition band slope for the main lobe of 15.09 dB/MHz. The results guide new researchers or students in expanding the use of numerical tools in designing SAW transducers and SAW devices.

高频表面声波传感器的数值分析与设计:压电基板和 IDT 配置的影响
声表面波传感器的开发需要一系列步骤,从材料选择、几何设计到表征和验证过程中的制造技术选择。在此,我们使用有限元法(FEM)介绍了一种方法,并详细分析了延迟线配置中声表面波传感器的设计。首先,我们在两种压电基底(64 ° $$ {}^{{}^{/circ}$ 的 LiNbO 3 $$ {}_3 $$)上模拟了具有不同几何形状和 IDT 设计的单指和双指配置。$YX 和 LiNbO 3 $$ {}_3 $$ 128 ° $$ {}^{}^{circ}}$$ YX 方向,将模拟结果与分析三角模型进行比较,从而验证模拟过程,结果显示均方根误差 (RMSE) 值在 10.79 dB 到 16.42 dB 之间。有鉴于此,我们进行了一项比较分析,通过研究在 97.02 MHz 共振频率下工作的特定传感器设计,确定压电材料和 IDT 配置的影响。我们比较了 128 ° $$ {}^{}^{\circ}} YX 和 64 ° $$ {}^{}^{\circ}} YX 上的相同设计。YX 和 64 °$ {}^{}^{circ}} 的相同设计进行了比较。YX 取向的铌酸锂 3 $$ {}_3 $$,采用单指和双指配置,并增加了与 SPUDT 配置的比较。我们观察到单指 IDT 配置在 128 ° $$ {}^{}^{\circ}} $$ YX LiNbO 3 的最佳结果。$$ YX LiNbO 3 $$ {}_3 $$ 方向的单指 IDT 配置与其他变体相比,插入损耗水平为 -7.29 dB,平均边瓣水平为 -18.63 dB,主瓣的平均过渡带斜率为 15.09 dB/MHz。这些结果为新研究人员或学生在设计声表面波传感器和声表面波器件时扩大数值工具的使用范围提供了指导。
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来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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