Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2024-10-15 DOI:10.1134/S0021364024602707

K. V. Likhachev, A. M. Skoromokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovski, M. E. Levinshtein, I. A. Eliseev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov

引用次数: 0

Abstract

The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.

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辐照碳化硅肖特基二极管自旋缺陷的局部诊断

我们记录了自旋子水平的反交叉光谱，并首次在用 0.9-MeV 电子或 15-MeV 质子辐照的市售 4H-SiC 肖特基二极管中发现了自旋-3/2 色心。研究显示了辐照密度对缺陷形成的影响。实验证明，质子辐照温度的升高会起到短期退火的作用，从而导致点缺陷浓度的降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.