Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2Tx framework

IF 8.3 1区材料科学 Q1 MATERIALS SCIENCE, COMPOSITES

Composites Science and Technology Pub Date : 2024-10-11 DOI:10.1016/j.compscitech.2024.110911

Tianyu Zhang , Yang Hong , Jingyang Li , Yang Li , Huiyang Zhao , Kai Cui , Wenjing Wei , Hongjun Kang , Jinzhu Wu , Wei Qin , Xiaohong Wu

{"title":"Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2Tx framework","authors":"Tianyu Zhang , Yang Hong , Jingyang Li , Yang Li , Huiyang Zhao , Kai Cui , Wenjing Wei , Hongjun Kang , Jinzhu Wu , Wei Qin , Xiaohong Wu","doi":"10.1016/j.compscitech.2024.110911","DOIUrl":null,"url":null,"abstract":"<div><div>The radiation resistance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is of great significance when applied in aerospace. However, it is still challenging to obtain MOSFETs with excellent radiation resistance. In this work, the radiation hardened MOSFETs were realized by GdF3-Al2O3@Bi-Ti3C2Tx/epoxy (MBAG/EP) polymer-based composite coating with function of trapped interfacial electrons. The radiation resistance of resultant packed MOSFET is significantly improved, showing the lower threshold voltage negative drift value (0.41 V) than the bare MOSFET (7.89 V). This is mainly attributed to the introduction of ultra-thin Al2O3 intermediate layer between Bi and GdF3, which effectively tailor electron dense and distribution for an effective electron attenuation, and thus improve the radiation resistance of the MOSFET. Theoretical calculations further reveal that the packed MOSFETs present the less shifted voltage and trapped charges compared with the pristine one. This work provides an interface engineering strategy for developing radiation hardened MOSFETs.</div></div>","PeriodicalId":283,"journal":{"name":"Composites Science and Technology","volume":"258 ","pages":"Article 110911"},"PeriodicalIF":8.3000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Composites Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0266353824004810","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, COMPOSITES","Score":null,"Total":0}

引用次数: 0

Abstract

The radiation resistance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is of great significance when applied in aerospace. However, it is still challenging to obtain MOSFETs with excellent radiation resistance. In this work, the radiation hardened MOSFETs were realized by GdF₃-Al₂O₃@Bi-Ti₃C₂T_x/epoxy (MBAG/EP) polymer-based composite coating with function of trapped interfacial electrons. The radiation resistance of resultant packed MOSFET is significantly improved, showing the lower threshold voltage negative drift value (0.41 V) than the bare MOSFET (7.89 V). This is mainly attributed to the introduction of ultra-thin Al₂O₃ intermediate layer between Bi and GdF₃, which effectively tailor electron dense and distribution for an effective electron attenuation, and thus improve the radiation resistance of the MOSFET. Theoretical calculations further reveal that the packed MOSFETs present the less shifted voltage and trapped charges compared with the pristine one. This work provides an interface engineering strategy for developing radiation hardened MOSFETs.

Abstract Image

查看原文本刊更多论文

由 Al2O3 诱导的 Bi-GdF3 实现的辐射硬化 MOSFET，Ti3C2Tx 框架中存在被困的界面电子

金属氧化物半导体场效应晶体管（MOSFET）的抗辐射性能在航空航天领域的应用中具有重要意义。然而，要获得具有优异抗辐射性能的 MOSFET 仍然是一项挑战。在这项工作中，通过 GdF3-Al2O3@Bi-Ti3C2Tx/epoxy (MBAG/EP) 聚合物基复合涂层实现了具有捕获界面电子功能的辐射硬化 MOSFET。与裸 MOSFET（7.89 V）相比，封装后的 MOSFET 的抗辐射能力明显提高，阈值电压负漂移值（0.41 V）更低。这主要归功于在 Bi 和 GdF3 之间引入了超薄 Al2O3 中间层，从而有效地调整了电子密度和分布，实现了有效的电子衰减，从而提高了 MOSFET 的辐射阻抗。理论计算进一步表明，与原始 MOSFET 相比，填料 MOSFET 的偏移电压和俘获电荷更少。这项研究为开发抗辐射 MOSFET 提供了一种界面工程策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Composites Science and Technology 工程技术-材料科学：复合

CiteScore

16.20

自引率

9.90%

发文量

611

审稿时长

33 days

期刊介绍： Composites Science and Technology publishes refereed original articles on the fundamental and applied science of engineering composites. The focus of this journal is on polymeric matrix composites with reinforcements/fillers ranging from nano- to macro-scale. CSTE encourages manuscripts reporting unique, innovative contributions to the physics, chemistry, materials science and applied mechanics aspects of advanced composites. Besides traditional fiber reinforced composites, novel composites with significant potential for engineering applications are encouraged.