Temperature dependent optical properties of ultrathin InAs quantum well

IF 3.3 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence Pub Date : 2024-10-11 DOI:10.1016/j.jlumin.2024.120939

Rahul Kumar , Yurii Maidaniuk , Fernando Maia de Oliveira , Yuriy I. Mazur , Gregory J. Salamo

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Abstract

Temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) of ultrathin InAs quantum wells (QWs) in GaAs matrix have been investigated to understand the optical properties of carriers. Samples containing different thicknesses of InAs (0.5, 0.75, 1, 1.2, 1.4 monolayers) have been used for this study. The PL peak position of InAs with temperature does not follow the Varshni model at low temperatures. The activation energy (E_A) of these QWs has been calculated from TDPL. As expected, the thinnest QW sample (0.5 monolayer) results in the smallest E_A of 23 meV, whereas the thickest QW sample (1.4 monolayer) results in the highest E_A of 79 meV. Carrier lifetime has been calculated from TRPL measurement for varying temperatures. At 10 K, the carrier lifetime increased almost linearly from 250 to 800 ps with the InAs QW thickness. Thicker InAs QW results in a longer carrier lifetime, which has been explained by the carrier escape model. Higher temperatures resulted in a decrease in carrier lifetime, which suggests carrier escape is dominating the temporal decay behavior.

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超薄砷化铟量子阱随温度变化的光学特性

为了了解载流子的光学特性，我们研究了砷化镓基质中超薄砷化镓量子阱（QW）的温度依赖性光致发光（TDPL）和时间分辨光致发光（TRPL）。本研究采用了含有不同厚度 InAs（0.5、0.75、1、1.2、1.4 单层）的样品。在低温条件下，InAs 的聚光峰位置随温度的变化并不遵循 Varshni 模型。这些 QW 的活化能 (EA) 是通过 TDPL 计算得出的。不出所料，最薄的 QW 样品（0.5 单层）的活化能最小，为 23 meV，而最厚的 QW 样品（1.4 单层）的活化能最高，为 79 meV。载流子寿命是根据不同温度下的 TRPL 测量结果计算得出的。在 10 K 时，载流子寿命从 250 ps 到 800 ps 几乎随着 InAs QW 厚度的增加而线性增加。InAs QW 厚度越大，载流子寿命越长，这可以用载流子逸出模型来解释。温度越高，载流子寿命越短，这表明载流子逸出在时间衰减行为中占主导地位。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Luminescence 物理-光学

CiteScore

6.70

自引率

13.90%

发文量

850

审稿时长

3.8 months

期刊介绍： The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid. We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.