Doped diamane: An efficient electron/hole collection layer in HIT solar cell

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Naima, Pawan K. Tyagi, Vinod Singh
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Abstract

In this report, the optimization of various parameters of electron/hole collection layer, buffer layer and active layer of the HIT solar cell have been carried out by using AFORS-HET software. Novelty of the reported work is the use of doped diamane as an effective electron/hole collection layers for the enhanced performance of the HIT solar cell. Here, n and p-type diamane layers are used as the electron/hole collection layers or the emitter and back surface field (BSF) layer, respectively. Considering the absorption loss at the front contact, the maximum efficiency (η) for the fully optimized cell is found 27.88 % with open circuit voltage (VOC) 691.1 mV, current density (JSC) 49.3 mA/cm2 and fill factor (FF) 81.83 % whereas, in conventional HIT cell with η of 25.6 % and JSC of 41.8 mA/cm2 reported by Masuko et. al. [7]. If zero absorption loss is considered, the efficiency could exceed its theoretical limit. A detailed study has also been done on the role of texturing angle and absorption loss found at the front contact of the solar cell.
掺杂二元胺:HIT 太阳能电池中的高效电子/空穴收集层
本报告使用 AFORS-HET 软件对 HIT 太阳能电池的电子/空穴收集层、缓冲层和活性层的各种参数进行了优化。报告工作的新颖之处在于使用掺杂二元胺作为有效的电子/空穴收集层,以提高 HIT 太阳能电池的性能。在这里,n 型和 p 型二元胺层分别用作电子/空穴收集层或发射极和背表面场(BSF)层。考虑到前触点的吸收损耗,完全优化电池的最高效率(η)为 27.88%,开路电压(VOC)为 691.1 mV,电流密度(JSC)为 49.3 mA/cm2,填充因子(FF)为 81.83%,而 Masuko 等人[7]报告的传统 HIT 电池的最高效率(η)为 25.6%,电流密度(JSC)为 41.8 mA/cm2。如果考虑零吸收损耗,效率可能会超过理论极限。此外,还对太阳能电池前触点的纹理角度和吸收损耗的作用进行了详细研究。
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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