Design and Fabrication of a C-Band Patch Antenna with Low Loss BaM4Si5O17 Microwave Dielectric Ceramics

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zheyu Liu, Kang Du, Chengyun Li, Weiping Gong, Ting Wang, Yiyang Cai, Yaodong Liu, Guochao Wei, Weijia Han, Yi Xiong, Wen Lei, Shengxiang Wang
{"title":"Design and Fabrication of a C-Band Patch Antenna with Low Loss BaM4Si5O17 Microwave Dielectric Ceramics","authors":"Zheyu Liu, Kang Du, Chengyun Li, Weiping Gong, Ting Wang, Yiyang Cai, Yaodong Liu, Guochao Wei, Weijia Han, Yi Xiong, Wen Lei, Shengxiang Wang","doi":"10.1021/acsami.4c11111","DOIUrl":null,"url":null,"abstract":"Single-phase BaM<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> (M = Yb, Er, Y, Ho) ceramics have been investigated for their crystal structures, microwave dielectric properties, flexural strength, and potential applications in dielectric antennas. Rietveld refinement and TEM analysis revealed that the BaM<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> ceramics exhibit a monoclinic structure (space groups: <i>P</i>2<sub>1</sub>/<i>m</i>). The ε<sub>r</sub> of the BaM<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> ceramics was dominated by ionic polarizability and ρ<sub>rel</sub>. The <i>Q</i> × <i>f</i> values were considerably larger at BaM<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> (M = Yb and Y) ceramics with the high <i>U</i><sub>total</sub> and low intrinsic dielectric loss. The τ<sub>f</sub> values were controlled by the MO<sub>6</sub> octahedron distortion and <sup>–</sup><i>V</i><sub>Ba</sub>. The flexural strength was mainly dominated by pores and average grain size and reached the maximum value (156 MPa) at BaY<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> ceramic with small average gain sizes and high relative density. Additionally, a patch antenna was fabricated using high-performance BaY<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> ceramic characterized by a ε<sub>r</sub> value of 9.02, a <i>Q</i> × <i>f</i> value of 60620 at 12.30 GHz, and a τ<sub>f</sub> value of −37.65 ppm/°C. This design achieved a high simulated radiation efficiency of 82.70% and a gain of 5.60 dBi at 6.97 GHz. indicating potential applications of BaY<sub>4</sub>Si<sub>5</sub>O<sub>17</sub> ceramic because of its low dielectric loss and high flexural strength.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"9 1","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c11111","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Single-phase BaM4Si5O17 (M = Yb, Er, Y, Ho) ceramics have been investigated for their crystal structures, microwave dielectric properties, flexural strength, and potential applications in dielectric antennas. Rietveld refinement and TEM analysis revealed that the BaM4Si5O17 ceramics exhibit a monoclinic structure (space groups: P21/m). The εr of the BaM4Si5O17 ceramics was dominated by ionic polarizability and ρrel. The Q × f values were considerably larger at BaM4Si5O17 (M = Yb and Y) ceramics with the high Utotal and low intrinsic dielectric loss. The τf values were controlled by the MO6 octahedron distortion and VBa. The flexural strength was mainly dominated by pores and average grain size and reached the maximum value (156 MPa) at BaY4Si5O17 ceramic with small average gain sizes and high relative density. Additionally, a patch antenna was fabricated using high-performance BaY4Si5O17 ceramic characterized by a εr value of 9.02, a Q × f value of 60620 at 12.30 GHz, and a τf value of −37.65 ppm/°C. This design achieved a high simulated radiation efficiency of 82.70% and a gain of 5.60 dBi at 6.97 GHz. indicating potential applications of BaY4Si5O17 ceramic because of its low dielectric loss and high flexural strength.

Abstract Image

使用低损耗 BaM4Si5O17 微波介电陶瓷设计和制作 C 波段贴片天线
对单相 BaM4Si5O17(M = Yb、Er、Y、Ho)陶瓷的晶体结构、微波介电性能、抗弯强度以及在介电天线中的潜在应用进行了研究。里特维尔德细化和 TEM 分析表明,BaM4Si5O17 陶瓷呈现单斜结构(空间群:P21/m)。BaM4Si5O17 陶瓷的 εr 由离子极化率和ρrel 主导。在具有高Utotal和低本征介电损耗的BaM4Si5O17(M = Yb和Y)陶瓷中,Q × f值要大得多。τf 值受 MO6 八面体畸变和 -VBa 的控制。抗弯强度主要受孔隙和平均晶粒尺寸的影响,在平均增益尺寸小、相对密度高的 BaY4Si5O17 陶瓷中达到最大值(156 兆帕)。此外,还利用高性能 BaY4Si5O17 陶瓷制作了贴片天线,其εr 值为 9.02,12.30 GHz 时的 Q × f 值为 60620,τf 值为 -37.65 ppm/°C。该设计的模拟辐射效率高达 82.70%,在 6.97 GHz 时的增益为 5.60 dBi,这表明 BaY4Si5O17 陶瓷具有低介电损耗和高抗弯强度的潜在应用价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信