The use of low-frequency current fluctuations in measuring the mobility of holes in the MEH-PPV polymer

IF 4 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Synthetic Metals Pub Date : 2024-10-02 DOI:10.1016/j.synthmet.2024.117764

Jiří Toušek , Jana Toušková , Ivo Křivka , Bita Ghasemi , Ivo Kuřitka , Pavel Urbánek

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Abstract

A diagnostic method based on the evaluation of low-frequency current fluctuation spectra is presented. When measuring the current through a p-type MEH-PPV sample, the occurrence of fluctuation is observable which can be measured with an AC amplifier. A model has been proposed that proves that the fluctuations originate from the interaction between the valence band and the band gap traps. The mean value of the amplitudes of these fluctuations increases linearly with decreasing frequency with a slope from which the product of mobility and lifetime of current carriers µ_pτ_p = (9 ± 3) × 10⁻¹⁵ cm²V⁻¹ was obtained. The hole lifetime of (0.27 ± 0.01) ns was evaluated from the luminescence relaxation using the time-correlated single photon counting (TCSPC) technique. The mobility value (3 ± 1) × 10⁻⁵ cm² V⁻¹s⁻¹ calculated using the above methods was compared with the mobility 1.8 × 10⁻⁵ cm² V⁻¹s⁻¹ determined by the CELIV method (Charge extraction by linearly increasing voltage) and good agreement was obtained.

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利用低频电流波动测量 MEH-PPV 聚合物中空穴的迁移率

本文介绍了一种基于低频电流波动谱评估的诊断方法。在测量通过 p 型 MEH-PPV 样品的电流时，可以观察到波动的发生，这种波动可以用交流放大器测量。我们提出了一个模型，证明波动源于价带和带隙陷阱之间的相互作用。这些波动幅度的平均值随着频率的降低而线性增加，其斜率为电流载流子的迁移率和寿命的乘积 µpτp = (9 ± 3) × 10-15 cm2V-1。利用时间相关单光子计数（TCSPC）技术，通过发光弛豫评估出空穴寿命为 (0.27 ± 0.01) ns。将上述方法计算出的迁移率值 (3 ± 1) × 10-5 cm2 V-1s-1 与 CELIV 方法（通过线性增加电压进行电荷提取）测定的迁移率 1.8 × 10-5 cm2 V-1s-1 进行了比较，结果一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Synthetic Metals 工程技术-材料科学：综合

CiteScore

8.30

自引率

4.50%

发文量

189

审稿时长

33 days

期刊介绍： This journal is an international medium for the rapid publication of original research papers, short communications and subject reviews dealing with research on and applications of electronic polymers and electronic molecular materials including novel carbon architectures. These functional materials have the properties of metals, semiconductors or magnets and are distinguishable from elemental and alloy/binary metals, semiconductors and magnets.