Study of Curie temperature, ferromagnetism and thermoelectric properties of spinels CdCr2X4 (X=S, Se, Te) for spintronic and energy harvesting

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Q. Mahmood , Ahmad Ayyaz , Ali Akremi , Jabir Hakami , Muhammad Younas , Hanof Dawas Alkhaldi , Mouna Jeridi , Leema Aliyaru Kunju , Imen Kebaili
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引用次数: 0

Abstract

Spintronics is a developing field in technological advancement that manipulates the electrons’ spin to transfer and manipulate data at an exceptionally high speed. Therefore, this paper has comprehensively analyzed the electronic, ferromagnetic, and thermoelectric aspects of CdCr2X4 (X=S, Se, Te) spinels. The optimization screening indicates that the ferromagnetic phases exhibit a higher energy release than the antiferromagnetic phases. Thus, the investigated compounds exhibit ferromagnetic phases. Auditing band structures and spin polarization ensures ferromagnetic semiconducting behavior. The Curie temperature verifies the ferromagnetism at temperatures beyond 300 K. In addition, several aspects related to the nature of ferromagnetism are addressed. The distribution of magnetic to nonmagnetic (Cr, Cd, X) is the attribution of ferromagnetism by electrons’ spin instead of the accumulation of Cr ions. In addition, the transport factors for spin (↑) and spin (↓) are evaluated to analyze the influence of thermal factors on electron spin and energy conversion.
用于自旋电子和能量收集的尖晶石 CdCr2X4(X=S、Se、Te)的居里温度、铁磁性和热电性能研究
自旋电子学是一个不断发展的技术进步领域,它操纵电子自旋以超高速传输和处理数据。因此,本文全面分析了 CdCr2X4(X=S、Se、Te)尖晶石的电子、铁磁和热电方面。优化筛选结果表明,铁磁相比反铁磁相具有更高的能量释放。因此,所研究的化合物表现出铁磁相。审核带状结构和自旋极化可确保铁磁半导体行为。居里温度验证了 300 K 以上温度下的铁磁性。磁性到非磁性(Cr、Cd、X)的分布是电子自旋而不是 Cr 离子堆积造成的铁磁性。此外,还评估了自旋(↑)和自旋(↓)的传输因子,以分析热因素对电子自旋和能量转换的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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