Study on the enhancement of device performance by the action of carbonohydrazide at the buried bottom interface of inverted mesoporous perovskite solar cells

Abstract

The interface of perovskite solar cells (PSCs) significantly influences their efficiency and stability. Researchers tend to pay more attention to the upper surface of the perovskite absorber layer and conduct relatively less research on the bottom buried interface, mainly because the bottom of the perovskite film is challenging to peel off, which increases the difficulty of the characterization of the observation and analysis. Defects at the bottom interface make it more challenging to optimize the treatment than the upper surface. For inverted PSCs, the interface located in direct contact between the light absorption layer of perovskite and the hole transport layer is the buried interface. The buried interface is the direct interface for transporting charge carriers of PSCs and is also the center of non-radiative compound enrichment. The defect density is higher than the defect density of perovskite film crystal. Due to the DMSO initially left in the commonly used perovskite precursor solution during the film formation process, evaporation during the annealing and crystallization process creates vacancy holes at the bottom of the perovskite layer film. These holes and crystal boundaries tend to produce many non-radiative recombinations. These holes are also the sites of photodecomposition, leading to reduced efficiency and stability in PSCs, ultimately impacting the overall performance of PSCs. The work adds an Al₂O₃ mesoporous layer on top of the hole transport layer (HTL), which reduces the direct contact area between PTAA and perovskite film. In the perovskite precursor solution, we incorporate a solid additive called Carbonohydrazide (CBH), this substance replaces some of the DMSO and fills in the voids at the bottom of the perovskite film that is left when the DMSO evaporates. This process helps to reduce non-radiative recombination and photodegradation caused by the voids at the bottom of the perovskite, leading to an improvement in the efficiency and stability of the cell. The optimization of the buried bottom interface has improved the cell’s average efficiency from 17.6 % to 19.7 %, an 11.9 % increase. The aperture area of the devices in this work is 0.048 cm², and the photoelectric conversion efficiency of our device still reaches 80.64 % of the initial efficiency after 600 h of continuous heating in a glove box with a nitrogen atmosphere, maintaining a test temperature of 60 °C.