Optical and magnetic properties of Zn0.9Mn0.05Fe0.05O thin films deposited by RF-magnetron sputtering

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER
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Abstract

Zn0.9Mn0.05Fe0.05O were synthesized by rf-magnetron sputtering in an argon gas environment show a hexagonal wurtzite structure without any secondary phases of dopants MnO or Fe2O3. The crystallite (D) parameters estimated from the XRD pattern disclose a significant decrease with argon partial gas pressure from 3.34 to 11.80 nm. The surface morphology of as-deposited films has a dense columnar microstructure with an average grain size of about 14–18 nm with roughness (RMS) from ∼2.86 to 7.67 nm. The sputtered thin films exhibit high optical transmittance in the visible range with a significant redshift as a function of working pressure. The energy band gap shows a slight increase with gas pressure in the range of about ∼3.05–3.36 eV. The films deposited for argon gas pressures of 12 & 15 mTorr have room-temperature ferromagnetism due to oxygen vacancies/defect concentrations in the host ZnO matrix.
射频磁控溅射法沉积的 Zn0.9Mn0.05Fe0.05O 薄膜的光学和磁学特性
Zn0.9Mn0.05Fe0.05O是在氩气环境中通过射频-磁控溅射合成的,显示出六方菱形结构,没有任何掺杂剂MnO或Fe2O3的次生相。根据 XRD 图谱估算的晶粒(D)参数显示,随着氩气分压的增加,晶粒(D)参数从 3.34 纳米显著下降到 11.80 纳米。沉积薄膜的表面形态具有致密的柱状微观结构,平均晶粒大小约为 14-18 nm,粗糙度(RMS)为 2.86 至 7.67 nm。溅射薄膜在可见光范围内表现出很高的光学透过率,并随着工作压力的变化而发生显著的红移。能带间隙随着气体压力的增加而略有增加,范围约为∼3.05-3.36 eV。在 12 & 15 mTorr 的氩气压力下沉积的薄膜具有室温铁磁性,这是由于主氧化锌基体中的氧空位/缺陷浓度造成的。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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